Electronic stopping of Si from a three-dimensional charge distribution

Sillanpää, J.; Nordlund, K.; Keinonen, J.

doi:10.1103/physrevb.62.3109

Cited by 32 publications

(28 citation statements)

References 47 publications

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“…Our calculations of F(R p ) of these ions are compared in Figs. 3 and 4 with the experimental data of concentration profiles quoted in [23] and with that calculated using the TRIM code [10]. Since the experimental implanted ion concentration F(R p ) for As are not given in absolute values, we present these results in Fig.…”

Section: Verification Of the Modelmentioning

confidence: 98%

“…The transition to a heavier ion is obtained by a charge scaling rule [21]. In [23], it was proposed to use the DFT, taking into account also the electronic structure of the ion as being embedded in the electron gas. Moreover, this approach uses a three dimensional charge distribution thereby making the interaction partly local.…”

Section: Inelastic Electronic Scatteringmentioning

confidence: 99%

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Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Akkerman¹,

Barak²

2007

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Verification Of the Modelmentioning

confidence: 98%

Section: Inelastic Electronic Scatteringmentioning

confidence: 99%

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Akkerman¹,

Barak²

2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…Range calculations were performed with the MDRANGE code [23] to assess the influence of channelling on sputtering yields. This method has already given a very good estimation of ion ranges in crystal channels in GaN and GaAs samples of different orientations [24,25].…”

Section: Simulations and Discussionmentioning

confidence: 99%

Sputtering yields exceeding 1000 by 80keV Xe irradiation of Au nanorods

Il'inov

Kuronen

Nordlund

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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Using experiments and computer simulations, we find that 80 keV Xe ion irradiation of Au nanorods can produce sputtering yields exceeding 1000, which to our knowledge are the highest yields reported for sputtering by single ions in the nuclear collision regime. This value is enhanced by more than an order of magnitude compared to the same irradiation of flat Au surfaces. Using MD simulations, we show that the very high yield can be understood as a combination of enhanced yields due to low incoming angles at the sides of the nanowire, as well as the high surface-to-volume ratio causing enhanced explosive sputtering from heat spikes. We also find, both in experiments and simulations, that channeling has a strong effect on the sputtering yield: if the incoming beam happens to be aligned with a crystal axis of the nanorod, the yield can decrease to about 100.

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“…83,92,180,224 Numerous comparisons of experimental depth distributions of implanted ions with BCA and MD range calculations have shown that this approach is sufficient to describe at least the penetration depths of energetic ions. [225][226][227][228][229] Implementing electronic effects as a purely frictional force does not, however, in any way account for the possibility that electrons transfer heat back to the ionic system. There are several important physical processes where such a transfer happens.…”

Section: G Phenomenological Descriptions Of Electronic Excitationmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

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946

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Electronic stopping of Si from a three-dimensional charge distribution

Cited by 32 publications

References 47 publications

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Partitioning to elastic and inelastic processes of the energy deposited by low energy ions in silicon detectors

Sputtering yields exceeding 1000 by 80keV Xe irradiation of Au nanorods

Ion and electron irradiation-induced effects in nanostructured materials

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