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We present results of systematic Monte Carlo calculations of electron transport in silicon for the wide energy range of 0.02–200 keV, obtained in the frame of a single model using verified input data. The results include characteristics of electron transport, such as backscattering coefficients, ranges, transmission, and deposited-energy distributions, which are quantities of importance for electron-beam applications. The calculations of the spatial and temporal evolution of the electron-initiated cascades of secondary electrons yield a better understanding of the electron and ion track structures and related effects in silicon.

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A model for ion-energy deposition in silicon, based on experimental data of the optical energy loss function, is presented. The model yields the characteristics of ion-and electron-interactions in silicon. Monte Carlo transport calculations based on this model give the energy distribution and its moments including a full and consistent description of the spatial ion track structure. The model was used for estimating the influence of the track structure on energy deposition in submicron devices and on the shape of the single event upsets (SEUs) cross-section curves.Index Terms-Dielectric response theory, dose radial distribution, energy deposition in nanometer volumes, inelastic atomic ion scattering, straggling.

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