Monte Carlo calculations of electron transport in silicon and related effects for energies of 0.02–200 keV

Abstract

We present results of systematic Monte Carlo calculations of electron transport in silicon for the wide energy range of 0.02–200 keV, obtained in the frame of a single model using verified input data. The results include characteristics of electron transport, such as backscattering coefficients, ranges, transmission, and deposited-energy distributions, which are quantities of importance for electron-beam applications. The calculations of the spatial and temporal evolution of the electron-initiated cascades of secondary electrons yield a better understanding of the electron and ion track structures and related effects in silicon.

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

“…While 280 MeV Fe is highly ionizing compared with the protons considered in the previous section (LET = 21.7 MeV#cm 2 /mg in silicon), due to kinematics, the maximum energy !-ray produced is 10 keV. The CSDA range of a 10 keV electron is 1.49 µm in silicon [33], [34], [35], which means that there is a limitation to the radial extent of the ion track consistent with Fig. 20.…”

“…Akkerman et al from energy-loss function theory based on the complex dielectric function in [33] and [34], which relies on mean field approximations of the target material [33], we gain knowledge of the average distance between inelastic scattering events for !-rays, the inelastic mean free path (IMFP) in a given medium. Knowledge of the average distance between energy loss events and stopping power for an incident !-ray allow for an approximation of the range of !-rays in materials is known as the continuous slowing down approximation (CSDA), and is based around the earlier experimental work and theory on !-rays previously discussed.…”

“…As a result of the higher average !-ray energy, events produced by 1 GeV protons are capable of depositing more energy in small sensitive volumes than those produced by from the strike location, where the tail of the curve extends due to contributions from higher energy events involving 1 GeV protons. Since the IMFP scales with increasing energy [33], [34], [35] in these simulated events, many of the generated !-rays have significantly longer range than the structure considered thus far. These longer-range events may impact devices at great distances, potentially hundreds of micrometers, from the location of the incident particle strike as indicated by Fig.…”

Electron–phonon interactions in silicon: Mean free paths, related distributions and transport characteristics

“…Our approach does not consider the hole interactions, as well as impact ionization, an effect which is negligible for the LEE. For higher energies this effect was included in our previous work [19] and can be added in a straightforward manner into the calculation algorithm, as we show below in Section 3.1.…”

A study for the detection of ionizing particles with gate-controlled phototransistor on SOI substrate

“…In EBCMOS, the photoelectrons are accelerated to impinge onto the silicon and then the secondary electrons are collected by pixels and handled later. However, the detection part of EBCMOS has low efficiency [6,7].…”