Ion and electron track-structure and its effects in silicon: model and calculations

Akkerman, A.; Barak, J.; Emfietzoglou, Dimitris

doi:10.1016/j.nimb.2004.08.020

Cited by 84 publications

(68 citation statements)

References 68 publications

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“…Compared to [66,67] our initial energy distribution differs by less than 10% for an Al beam in silicon with energies ranging between 0.37 and 370 MeV/u. The nuclear stopping power was neglected on the basis of the experimental results given by Döbeli et al [32].…”

Section: Discussionmentioning

confidence: 72%

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Chettah

Kucal

Wang

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Discussionmentioning

confidence: 72%

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Chettah

Kucal

Wang

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…An alternative approach is the use of a model dielectric response function for the target material. [23][24][25][26] Although the approach based on the dielectric function allows some degree of self-consistency through the restrictions imposed by various sum-rules, it often requires elaborate algorithms for properly deducing the contribution of the individual inelastic processes. 27,28 The implemented physics models allow electron transport down to 10 eV (shown in grey in Figure 1).…”

Section: Description Of Geant4-dna Physics Models For Goldmentioning

confidence: 99%

An implementation of discrete electron transport models for gold in the Geant4 simulation toolkit

Sakata

Incerti

Bordage

et al. 2016

Journal of Applied Physics

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Gold nanoparticle (GNP) boosted radiation therapy can enhance the biological effectiveness of radiation treatments by increasing the quantity of direct and indirect radiation-induced cellular damage. As the physical effects of GNP boosted radiotherapy occur across energy scales that descend down to 10 eV, Monte Carlo simulations require discrete physics models down to these very low energies in order to avoid underestimating the absorbed dose and secondary particle generation. Discrete physics models for electron transportation down to 10 eV have been implemented within the Geant4-DNA low energy extension of Geant4. Such models allow the investigation of GNP effects at the nanoscale. At low energies, the new models have better agreement with experimental data on the backscattering coefficient, and they show similar performance for transmission coefficient data as the Livermore and Penelope models already implemented in Geant4. These new models are applicable in simulations focussed towards estimating the relative biological effectiveness of radiation in GNP boosted radiotherapy applications with photon and electron radiation sources. Gold nanoparticle (GNP) boosted radiation therapy can enhance the biological effectiveness of radiation treatments by increasing the quantity of direct and indirect radiation-induced cellular damage. As the physical effects of GNP boosted radiotherapy occur across energy scales that descend down to 10 eV, Monte Carlo simulations require discrete physics models down to these very low energies in order to avoid underestimating the absorbed dose and secondary particle generation. Discrete physics models for electron transportation down to 10 eV have been implemented within the Geant4-DNA low energy extension of Geant4. Such models allow the investigation of GNP effects at the nanoscale. At low energies, the new models have better agreement with experimental data on the backscattering coefficient, and they show similar performance for transmission coefficient data as the Livermore and Penelope models already implemented in Geant4. These new models are applicable in simulations focussed towards estimating the relative biological effectiveness of radiation in GNP boosted radiotherapy applications with photon and electron radiation sources. Published by AIP Publishing. [http://dx

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“…(3b) resembles the plasmon dispersion of the free-electron gas at small-q. Recent applications of the above version of the Ritchie and Howie model may be found in Leger et al [19], Akkerman et al [20] and Tung et al [21]. For condensed water, the availability of experimental data for all dielectric function representations, namely, ReðeÞ ¼ e 1 ; ImðeÞ ¼ e 2 and Im À1=e ð Þ, has motivated the development of somewhat more elaborate representations of its dielectric response properties where basic band structure characteristics are accounted for [12][13][14][15][16]22].…”

Section: The Extended-drude Dielectric Functionmentioning

confidence: 99%

Semi-empirical dielectric descriptions of the Bethe surface of the valence bands of condensed water

Emfietzoglou

Abril

García-Molina

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Ion and electron track-structure and its effects in silicon: model and calculations

Cited by 84 publications

References 68 publications

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

An implementation of discrete electron transport models for gold in the Geant4 simulation toolkit

Semi-empirical dielectric descriptions of the Bethe surface of the valence bands of condensed water

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