2005
DOI: 10.2116/analsci.21.309
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Electronic Structure Analysis of Iron(III)-Porphyrin Complexes by X-ray Absorption Spectra at the C, N and Fe K-Edges

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Cited by 22 publications
(27 citation statements)
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“…Hence, N 1s XP spectra of free base porphyrin molecules, including 2H-P, 26,47 typically feature two peaks that are separated by approximately 2 eV. 48,49 This energy separation is reduced when the nitrogen atoms strongly interact with a substrate, such as the case with Cu(111), 22,50 while it is preserved on more weakly interacting surfaces 50 and in multilayers. 51 The nitrogen region is of special interest for following chemical reactions such as the metalation of free-base porphyrins [52][53][54] and is therefore frequently addressed.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, N 1s XP spectra of free base porphyrin molecules, including 2H-P, 26,47 typically feature two peaks that are separated by approximately 2 eV. 48,49 This energy separation is reduced when the nitrogen atoms strongly interact with a substrate, such as the case with Cu(111), 22,50 while it is preserved on more weakly interacting surfaces 50 and in multilayers. 51 The nitrogen region is of special interest for following chemical reactions such as the metalation of free-base porphyrins [52][53][54] and is therefore frequently addressed.…”
Section: Resultsmentioning
confidence: 99%
“…[2][3][4][5] In the case of an indirect band gap material such as crystalline silicon, photosensitisation has the potential to substantially enhance the photoexcitation rate for electron-hole pairs, resulting in significant savings in material, and bringing about an exciting new paradigm for future solar cells and other optoelectronic devices. 6 Previous experimental studies have reported quenching of molecular fluorescence in proximity to silicon from evaporated dyes layers, 4,5,7 quantum dots, 8 Langmuir-Blodgett (LB) films [9][10][11][12] or zeolite structures 13 but at a greater distance of the emitter from the surface of silicon (>2nm) than the work presented in this paper where we focus on emitter-surface separations of less than 2 nm. The native oxide present on the surface of silicon then needs to be removed and the silicon surface subsequently functionalised.…”
mentioning
confidence: 93%
“…From the integrals for the pyrrolic (-NH-) at ~400.6 eV and iminic (=N) at ~398.7 eV nitrogen peaks confirms that the PpIX molecules were attached on the surface in accordance with previous XPS spectra on porphyrins in the literature. 2,6,7 It appears that some porphyrin groups have bound a metal atom. .…”
mentioning
confidence: 99%
“…Doping electron withdrawing ligands to metal center or neighboring carbon has been proved effective in weakening the adsorption energy. [4] Notably,o xygen containing species with high electron negativities are proved to be excellent energy level modifiers,where oxygen species such as -OH are bounded to the metal center to form new MN 4 OH. [5] However,t hese species are only autonomously introduced to date,w ith the controllable fixture being highly challenging.…”
Section: Introductionmentioning
confidence: 99%