Electronic structure and band gap engineering of CdTe semiconductor nanowires

Sarkar, Sunandan; Pal, Sougata; Sarkar, Pranab

doi:10.1039/c2jm16810c

Cited by 36 publications

(22 citation statements)

References 76 publications

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“…The band gap of the semiconductor was determined to be 1.49 eV by employing the Kubelka–Munk function. This value is in accordance with literature data at approximately 1.45–1.5 eV [18]. …”

Section: Resultssupporting

confidence: 93%

Electrical properties of single CdTe nanowires

Matei¹,

Florica²,

Costas³

et al. 2015

Beilstein J. Nanotechnol.

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SummaryIon track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties.

show abstract

Section: Resultssupporting

confidence: 93%

Electrical properties of single CdTe nanowires

Matei¹,

Florica²,

Costas³

et al. 2015

Beilstein J. Nanotechnol.

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show abstract

“…The band gap of the semiconductor was determined to be 1.49 eV by employing the Kubelka-Munk function. This value is in accordance with literature data at approximately 1.45-1.5 eV [18]. The nanowires were further harvested in chloroform by ultrasonication.…”

Section: Resultssupporting

confidence: 92%

Electrical properties of single CdTe nanowires

Matei¹,

Florica²,

Costas³

et al. 2016

Nano Online

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Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beaminduced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties.

show abstract

“…Consequently, the effective band-gap width will be reduced [15]. The band gap values found to be in good agreement with those published in the literature of CdTe [18], [19]. Fig.…”

Section: Resultssupporting

confidence: 79%