2019
DOI: 10.1038/s41699-018-0083-1
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Electronic structure and exciton shifts in Sb-doped MoS2 monolayer

Abstract: The effective manipulation of excitons is important for the realization of exciton-based devices and circuits, and doping is considered a good strategy to achieve this. While studies have shown that 2D semiconductors are ideal for excitonic devices, preparation of homogenous substitutional foreign-atom-doped 2D crystals is still difficult. Here we report the preparation of homogenous monolayer Sb-doped MoS 2 single crystals via a facile chemical vapor deposition method. A and B excitons are observed in the Sb-… Show more

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Cited by 87 publications
(27 citation statements)
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“…Additionally, it was noted that E 1 2g and A 1g peaks for Mo 0.75 V 0.25 S 2 became broader and weaker, suggesting that the vanadium dopant might have caused some disruption to the MoS 2 crystal structure. [ 31,39–41 ] In Figure 3b, distinct peaks at ≈284 and ≈242 cm −1 , corresponding to the in‐plane E 1 2g and out‐of‐plane A 1g vibrational modes of MoSe 2 were noted, which corroborate well with the literature values for multilayered MoSe 2 . [ 34,42,43 ] Last, peaks at ≈162, ≈118, and ≈227 cm −1 corresponding to A 1g , E 1g , and E 1 2g of MoTe 2 were observed for the V‐doped MoTe 2 .…”
Section: Resultssupporting
confidence: 85%
“…Additionally, it was noted that E 1 2g and A 1g peaks for Mo 0.75 V 0.25 S 2 became broader and weaker, suggesting that the vanadium dopant might have caused some disruption to the MoS 2 crystal structure. [ 31,39–41 ] In Figure 3b, distinct peaks at ≈284 and ≈242 cm −1 , corresponding to the in‐plane E 1 2g and out‐of‐plane A 1g vibrational modes of MoSe 2 were noted, which corroborate well with the literature values for multilayered MoSe 2 . [ 34,42,43 ] Last, peaks at ≈162, ≈118, and ≈227 cm −1 corresponding to A 1g , E 1g , and E 1 2g of MoTe 2 were observed for the V‐doped MoTe 2 .…”
Section: Resultssupporting
confidence: 85%
“…e crystal structure of the 3%MMS/rGO composite was further verified by the FFT patterns and the SAED shown in Figures 2(h) and 2(i). e values of the lattice spacing are 2.82 and 1.61Å, which are corresponding to the (100) and (110) planes of 2H-MoS 2 , respectively [31], which both are confirmed in SAED pattern (Figure 2(i)). e halo ring and unclear dot arrangement in FFT and SAED patterns illustrate for the low crystallinity of the material.…”
Section: Photocatalytic Activitymentioning
confidence: 53%
“…Previously, optical response of TMDs has been changed using applied bias and femtosecond light pulses that introduced large number of carriers and increased screening of the Coulomb interaction [7,33]. Generally, using p-type dopants caused a shift toward higher energies in excitonic peaks, whereas n-type dopant caused a shift toward lower energies in excitonic peaks [34,35].…”
Section: Resultsmentioning
confidence: 99%