Electronic Structure and Graphenization of Hexaphenylborazine

Abstract

Synthesis of graphene that contains boron and nitrogen is still a big challenge. In this paper, we report the growth of boron (B)-and nitrogen (N)-doped graphene on a Pt(111) surface by graphenization of a novel molecule, hexaphenylborazine (HPB). We performed quantum chemical calculations for the molecule and compared the results with the photoelectron spectra. Deposition of HPB onto the heated Pt(111) substrate led to formation of the doped graphene. Incorporation of nitrogen and boron atoms to the graphene lattice was observed up to the substrate temperature of 600 °C and at 400 °C, respectively. On the basis of the experimental results and Mulliken population analysis, we discuss the possible atomic configuration of B,N-doped graphene.

Effect of UV light-induced nitrogen doping on the field effect transistor characteristics of graphene

“…7,8 With regard to CACs, increased conductivity by electron doping as a result of N-doping is important rather than emergence of a band gap. Despite the many studies on the synthesis of N-doped graphene, [9][10][11][12][13][14][15][16][17] controlling the doping level is still a big challenge. One of the major reasons is the trade-off relationship between the degree of graphenization and the N-doping amount; the former requires a high growth temperature, while the latter decreases rapidly with temperature.…”

“…One of the major reasons is the trade-off relationship between the degree of graphenization and the N-doping amount; the former requires a high growth temperature, while the latter decreases rapidly with temperature. [13][14][15][16][17] To overcome such a dilemma, a N-doping method effective still at room temperature is required. In addition, a direct N-doping method to graphene that can control the doping level has been highly anticipated.…”

The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene

“…We have already found that monolayer graphene on Pt(111), which was grown from ethylene molecules, showed the intensity ratio of 0.034. 32 Therefore the amount of C atoms in the film deposited at 400 1C corresponds to that of a monolayer graphene.…”

“…27,28 We had previously conducted CVD growth of pristine and nitrogen doped graphenes on Pt(111). [29][30][31][32][33] Platinum is chemically stable and less contaminated compared to copper or other transition metals on which graphene can be grown. Pt does not need hydrogen during the CVD growth of graphene, making it possible to synthesize nitrogen doped graphene from a single source molecule.…”

“…34 In our previous work, we have examined the growth of nitrogen doped graphene on Pt(111) from source molecules such as pyridine (C 5 H 5 N), acrylonitrile (C 3 H 3 N), and hexaphenylborazine (B 3 N 3 H 6 , HPB). 31,32 Except acrylonitrile, nitrogen doped graphene was formed by depositing the source molecules on a heated Pt substrate only at the temperatures equal to or lower than 500 1C. The nitrogen atoms are doped mostly at a pyridinic site in the pyridine-derived graphene and at a pyridinic site in the BN grains in the HPB-derived graphene.…”