1999
DOI: 10.1103/physrevb.60.13396
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Electronic structure and magnetism ofFe3xVxXet al.

Abstract: We present first principles charge-and spin-selfconsistent electronic structure computations on the Heusler-type disordered alloys Fe 3−x V x X for three different metalloids X= (Si, Ga and Al). In these calculations we use the methodology based on the Korringa-Kohn-Rostoker formalism and the coherent-potential approximation (KKR-CPA), generalized to treat disorder in multi-component complex alloys. Exchange correlation effects are incorporated within the local spin density (LSD) approximation. Total energy ca… Show more

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Cited by 377 publications
(268 citation statements)
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“…1 and 2 are based on the QP-GW model 16,29 , an extension of our earlier Hartree-Fock (HF) model of AFM gap collapse 5,6,31,32 to the intermediate coupling regime by introducing a GWlike self-energy correction. [33][34][35][36] The self-energy in QP-GW model is dominated by a broad peak in Σ ′′ which produces the 'waterfall' effect 17,18 in the electronic dispersion by redistributing spectral weight into the coherent in-gap states and an incoherent residue of the undressed UHB and LHB. With underdoping, the in-gap states develop a pseudogap which we model as a (π, π)-ordered spin density wave.…”
Section: Intermediate Coupling Model Of Aswtmentioning
confidence: 99%
“…1 and 2 are based on the QP-GW model 16,29 , an extension of our earlier Hartree-Fock (HF) model of AFM gap collapse 5,6,31,32 to the intermediate coupling regime by introducing a GWlike self-energy correction. [33][34][35][36] The self-energy in QP-GW model is dominated by a broad peak in Σ ′′ which produces the 'waterfall' effect 17,18 in the electronic dispersion by redistributing spectral weight into the coherent in-gap states and an incoherent residue of the undressed UHB and LHB. With underdoping, the in-gap states develop a pseudogap which we model as a (π, π)-ordered spin density wave.…”
Section: Intermediate Coupling Model Of Aswtmentioning
confidence: 99%
“…[27] The crystal potential was constructed in the framework of the local density approximation (LDA), using von Barth and Hedin formula [28] for the exchangecorrelation part. For all atoms angular momentum cut- …”
Section: Electron-phonon Interaction and Superconductivitymentioning
confidence: 99%
“…Although the superconducting properties of V 3 Al in the A15 structure have been known for several decades, [10][11][12][13] when synthesized in the pseudo-Heusler D0 3 structure V 3 Al is expected to be an AF gapless semiconductor. [2,6,7] The D0 3 structure has the same space group as the L2 1 structure, but the binary D0 3 structure has a X 3 Z basis, while the ternary L2 1 structure has a X 2 YZ basis.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 1(c) illustrates the D0 3 structure of V 3 Al where the Al atom occupies the 4a Wyckoff position at (0,0,0), the V atom labeled V1 occupies the 4b position at (1/2, 1/2, 1/2), and the remaining two V atoms labeled V2 occupy the 8c position at (1/4, 1/4, 1/4). [11] The atoms along the cubic body diagonal have an Al-V2-V1-V2-Al configuration. The local environment of V1 includes eight V2 nearest-neighbors and six Al second-nearest-neighbors, whereas the V2 atoms have four Al and four V1 nearest-neighbors and six V2 second-nearest-neighbors.…”
Section: Introductionmentioning
confidence: 99%