Electronic structure and optical properties of Sn-doped ZnO

Optical Properties of Nano–Structured ZnO : Sn Powders Prepared in a Micro Drop Fluidized Reactor

“…Figure 8 shows the photoluminescence (PL) spectra of samples and the inset shows the relation between the PL and the photon energy. The intensity of emission peaks centering at around 390-410 nm decreased but that of broad peaks at around 520-570 nm increased, with increasing Sn 4+ content, as observed in the previous study (Qu et al, 2012). Since the former peaks correspond to the band-edge emission (3.17 eV) and the latter peaks to the deep-trap emission, the relative intensity of deep-trap to the band-edge emission increased considerably with increasing Sn 4+ content.…”

Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

“…Among metal oxide semiconductors, Zinc oxide (ZnO) has been extensively investigated due to its excellent physical properties and applications in commercial and scientific devices [1,[3][4][5][6][7]. This II-VI group n-type semiconductor is also one of the most important materials for the next generation devices [5] with a wide bandgap (3.37 eV) [1,2,8,9,[11][12][13]18], large exciton binding energy (60 meV) [10][11][12][13][14]18], low resistivity and high transparency in the visible range and high light trapping characteristics [8]. Due to these properties, this material is of considerable interest for practical applications such as photonic devices [15], gas sensors [3,8,9,15,16] and dye-sensitized solar cells [3,9,15,16,18] light emitting diodes (LED's), laser systems [3], transparent electrodes [3,8,9], piezoelectric device [8,16], flexible displays [17], surface acoustic wave devices (SAW) [9,16].…”

Ultrasound-assisted synthesis, characterization and optical property of 0–3wt% Sn-doped ZnO

“…It has been investigated as transparent conductors and piezoelectric materials for solar cells, transparent electrodes and gas sensors. To enhance the electrical/optical properties, ZnO was doped with group III, IV and V elements due to its superior conducting properties based on oxygen vacancies [1][2][3][4][5][6]. Recently, ZnO doped with Al, Ga, In, Sn and Sb were reported to have high potential applications for gas sensors, dye-sensitized solar cells and photocatalysis [6][7][8].…”

“…When ZnO is doped with Sn 4 þ , the ions substitute for Zn 2 þ sites in ZnO crystal, leading to two more negative charges to enhance the electrical conductivity. Furthermore, Zn 2 þ ions can be easily substituted by Sn 4 þ ions without large lattice distortion, because they are almost the same size (radii: Zn 2 þ ¼0.074 nm, Sn 4 þ ¼ 0.071 nm) [2][3][4]13].…”