Electronic Structure in Thin Film Organic Semiconductors

Smith, Kevin

doi:10.21236/ada510593

Cited by 1 publication

(1 citation statement)

References 31 publications

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“…These states most likely form as a result of the hydroxyl groups at the semiconductor/dielectric interface, interface dipole, or organic material itself. [35][36][37] These donor-like states serve as bulk hole traps which deeply capture holes in FET operation, resulting in many electrons appearing at the edge of the LUMO of F 16 CuPc molecules. In other words, as a result of charge neutrality, the trapped positive charges on bulk films compensate and induce the (mobile) negative charges on the F 16 CuPc molecules, thereby giving rise to depletion-mode operation.…”

Section: Single-gate Mode (''Bg Floattg'' or ''Tg Floatbg'')mentioning

confidence: 99%

Operational dynamics and architecture dependence of double-gate OFETs with balanced top and bottom channel characteristics

Luo

Yao

et al. 2015

J. Mater. Chem. C

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A double-gate organic field-effect transistor (DGOFET) utilizing thermally evaporated lithium fluoride (LiF) as the top gate dielectric and fluorinated copper-phthalocyanine (F 16 CuPc) as the active channel material was reported in this article. XRD and AFM analyses manifested that the fabricated LiF films on F 16 CuPc channel layer were highly dense polycrystalline, uniform, and flat. A comprehensive and systemic study of operational dynamics and architecture dependence of DGOFET was reported herein. Three different operating modes of DGOFET were introduced and demonstrated, which indicated that controllable device performances (considering output current, threshold voltage, etc.) could be obtained by double-gate architecture, and DGOFET working in the synchronized mode exhibited high field-effect mobility, low threshold voltage (absolute value), and large transconductance. Furthermore, the DGOFET based F 16 CuPc showed better gate modulation effect, which could achieve a switch from normally-on to off-state in double-gate mode. The successful operation of the fabricated DGOFETs also indicated that LiF is a promising material as the dielectric for realizing high-performance and patterned top-gate OFETs. Fig. 8 (a) Output characteristic curves of the mode "TG, BG=30V" by scanning TG with steps of 5 V from -15 to +15 V under fixed V g,bot = 30 V. (b) V g dependence of the drain saturation current (I sat ) for the mode "BG, floatTG", "TG, floatBG" and "TG, BG=30V", respectively. (c) "BG, TG=constant" mode: I d -V g,bot characteristics of the DGOFET for V g,top of 10 to -10 V with a step of 5 V. (d) V g,top dependence of the threshold voltage (V th ) for the DGOFET under the mode "BG, TG=constant".

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Section: Single-gate Mode (''Bg Floattg'' or ''Tg Floatbg'')mentioning

confidence: 99%