Electronic structure of Al, P, S, and Cl impurities in silicon

Abstract

rnWe report a fully self-consistent investigation of the electronic structure, relation between charge transfer and electronegativity, bonding characteristics, and alloying of Al, P, S, and C1 with silicon. The present study indicates that the charge transfer from the host Si atoms to the central impurity atom increases with electronegativity of the impurity element. The bonding between host Si atoms and the impurity atoms is ionic in nature. 0 1996 John Wiley & Sons, Inc. scattering x a (MSX a) method within the framework of the standard muffin tin potential approximation is used. This method, developed by Johnson and Smith E5, 61, has been successfully employed for defects in

Mechanism of Oxidation of (p‐Substituted Phenylthio)acetic Acids with N‐Chlorosaccharin

“…1), thereby causing a decrease in the rate of reaction. Similar conclusion has been arrived at in the studies of oxidation of acetophenone 24 , aspirin 25 and α-hydroxy acids 26 by NBP, amino acids by NBS 27 , secondary amines by CAT 27 and L-tyrosine by BAB 28 , where the N-halo reagent itself has been proposed as reactive oxidizing species.…”