Electronic structure of chalcogenide compounds from the system Tl2S-Sb2S3 studied by XPS and XES

A Study of Reversible γ-Induced Structural Transformations in Vitreous Ge23.5Sb11.8S64.7 by High-Resolution X-ray Photoelectron Spectroscopy

“…The characteristics of the S core-level peaks are given in Table 1. They are in good agreement with the analogous values given by other authors 18,25,26 (the somewhat higher values of binding energies from present data are most likely due to the difference in reference energy). The ratio of the areas of S 2p 3/2 -I and S 2p 3/2 -II peaks (73:27, see Table 1) is in excellent agreement with the nominal chemical composition expected from the chemical formula v-Ge 23.5 Sb 11.8 S 64.…”

“…This difference in peak energies is easily understood from the difference in electronegativity χ of S, Sb, and Ge atoms, viz., 2.58, 2.05, and 2.01, respectively . The Δχ value is higher for the Ge−S bond in comparison to that for the Sb−S pair, leading to a more effective charge transfer to S atoms in Ge−S than in Sb−S bonds 4 XPS core-level spectra of nonirradiated v-Ge 23.5 Sb 11.8 S 64.7 : S 2p (a) and Ge 3d and Sb 4d (b). 1 Numerical Parameters of XPS Core-level S 2p Spectra for Non-irradiated and γ-irradiated v-Ge 23.5 Sb 11.8 S 64.7 core-level peakS 2p 3/2 -I (S Ge -reg)S 2p 3/2 -II (S Sb -reg)S 2p 3/2 -III (S S -CTD)S 2p 3/2 -IV (S S -irreg)samplearea, %position, eVfwhmarea, %position, eVfwhmarea, %position, eVfwhmarea, %position, eVfwhm nonirradiated 73 160.55 0.98 27 160.95 0.78 γ-irradiated 69 160.50 0.92 25 160.90 0.82 3 160.05 0.70 3 161.35 1.20 …”

“…27 The ∆χ value is higher for the Ge-S bond in comparison to that for the Sb-S pair, leading to a more effective charge transfer to S atoms in Ge-S than in Sb-S bonds. 25 Figure 4b represents Sb 4d and Ge 3d core-level XPS spectra of thermally annealed v-Ge 23.5 Sb 11.8 S 64.7 , identified as 4d-I and 3d-I doublets, corresponding to regular Sb atoms within SbS 3/2 pyramids and regular Ge atoms within GeS 4/2 tetrahedra, respectively (Tables 2 and 3). The distance between the above peaks is 2.35 eV in good agreement with the analogous data for thin Ge-Sb-S films.…”

Radiation‐induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

“…The regular (normally-coordinated) environment around S-centered sites within SbS 3/2 pyramids and GeS 4/2 tetrahedra in non-irradiated ChG is seen in the corresponding 1/2-3/2 doublets in S 2p spectra. The binding energy of the main components of these doublets in the fitted spectra (160.95 and 160.55 eV for S 2p pyr reg and S 2p tetra reg units, respectively; see Table 1) correlates well with known data [8][9][10]. The S sites neighbouring with SbS 3/2 pyramids and GeS 4/2 tetrahedra could result in a separate doublet between the former two sets, but they could not be resolved in the investigated samples.…”

Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films

“…XPS has been used to study the electronic structure of a͒ chalcogenides, [28][29][30][31] as well as photoinduced structural changes such as photodecomposition, 32 oxidation, 33,34 and other compositional changes. 35 In situ XPS has also been applied to the study of light-induced changes in As-Se glasses.…”