2001
DOI: 10.1063/1.1370121
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Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy

Abstract: X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L2,3-, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni–O bond length, which enhances p–d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the oxidized contacts is … Show more

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Cited by 10 publications
(4 citation statements)
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“…The absorption edge of N-NiO shifts to a lower binding energy position compared with pristine NiO (Figure S4, Supporting Information), owing to the covalent effect attributed to the N doping. 29 Further, the small reduction in the amplitude for N-NiO was observed by Ni K-edge EXAFS spectroscopy k 3 χ(k) analysis, reflecting the change in the local atomic arrangement (Figure 1e). Figure 1f illustrates the Fourier-transformed EXAFS spectra, where the two main peaks are consistent with the Ni−O and Ni−Ni coordinations.…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…The absorption edge of N-NiO shifts to a lower binding energy position compared with pristine NiO (Figure S4, Supporting Information), owing to the covalent effect attributed to the N doping. 29 Further, the small reduction in the amplitude for N-NiO was observed by Ni K-edge EXAFS spectroscopy k 3 χ(k) analysis, reflecting the change in the local atomic arrangement (Figure 1e). Figure 1f illustrates the Fourier-transformed EXAFS spectra, where the two main peaks are consistent with the Ni−O and Ni−Ni coordinations.…”
Section: Resultsmentioning
confidence: 86%
“…Hence, the Ni K-edge XAFS spectra were measured by X-ray absorption fine-structure (XAFS) spectroscopy method. The absorption edge of N-NiO shifts to a lower binding energy position compared with pristine NiO (Figure S4, Supporting Information), owing to the covalent effect attributed to the N doping . Further, the small reduction in the amplitude for N-NiO was observed by Ni K-edge EXAFS spectroscopy k 3 χ­( k ) analysis, reflecting the change in the local atomic arrangement (Figure e).…”
Section: Resultsmentioning
confidence: 95%
“…It is known that it depends strongly on the substrate properties and hence its condition. Inorganic semiconductor materials are rarely studied in terms of their use as electrodes, ie, substrates for organic layer growth, which were mainly performed on metallic substrates . This is a consequence of experimental difficulties, and the need to use ultrahigh vacuum (UHV) conditions due to the high reactivity of the semiconductor surface.…”
Section: Introductionmentioning
confidence: 99%
“…However, the reason for the low resistive ohmic contact obtained by metallization of the Ti layer in GaN is under debate due to the complication of the Ti/GaN interfacial properties. X‐ray absorption near edge structure (XANES) has been effectively used for the study of the electronic structure of p‐GaN layers 10 and Ni/Au/p‐GaN contacts 11.…”
mentioning
confidence: 99%