Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)m

Lee, W.-J.; Ryu, Byungki; Chang, Kee Joo

doi:10.1016/j.physb.2009.08.178

Cited by 28 publications

(12 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…30 donor. 33,34 Moreover, studies on the effect of H suggest that H bonds to O, is positively charged, forms a shallow level, and donates electrons to the conduction band. 33 Although other studies exist on native defects in crystalline IGZO, 35 they did not consider H at high concentrations ($10 20 cm À3 ).…”

Section: Calculational Results and Discussionmentioning

confidence: 99%

“…This result of calculation is consistent with the calculation result of crystalline InGaO 3 (ZnO) m (m ¼ 3). 34 Transition level of this calculation corresponds to Fermi energy at which formation energies with different charged state are equal. In this calculation, the relaxed structures were different depending on charged states.…”

Section: Calculational Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V O ), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V O sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V O and H in crystalline InGaO 3 (ZnO) m (m ¼ 1). The results indicate that when H is trapped in V O , a stable complex is created that serves as a shallow-level donor. V C 2014 AIP Publishing LLC.

show abstract

Section: Calculational Results and Discussionmentioning

confidence: 99%

Section: Calculational Results and Discussionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…To date, there have been many experimental studies of the trap states in IGZO [16], but, to the best of our knowledge, the detection of such donorlike states has not been reported so much; e.g., the transient photoconductivity measurement, which is a special case of deep-level transient spectroscopy (DLTS), has suggested the existence of the activation states with an activation energies around ∼ 1.1 eV [17]. On the other hand, theoretical studies base on the density functional theory (DFT) have pointed out that the oxygen vacancy V O in crystalline InGaO 3 (ZnO) m (m = 1) exhibits a negative-U behavior with a charge transition level (2+/0) located at ∼ 1 eV below the conduction band minimum (i.e., ∼ 2 eV above the valence band maximum) [18,19]. As the Fermi level moves upward and crosses this level, the charge state transition occurs from the +2 to the neutral charge state.…”

Section: Discussionmentioning

confidence: 99%

Simulation and modeling of off-leakage current in InGaZnO thin-film transistors

Wakimura

Yamauchi

Kamakura

2015

JASSE

View full text Add to dashboard Cite

We investigate the mechanism of off-leakage current in InGaZnO (IGZO) thinfilm transistors with the help of a two-dimensional device simulator. The deep donorlike states probably originating from the oxygen vacancies are introduced in the IGZO channel, and it is shown that these trap states significantly affect I d − V g characteristics in the off-state region through the pinning of the channel potential. A simple analytical model to explain the simulation results is proposed, which suggests that the off-leak characteristics is controlled by the amount and the depth of the deep donorlike states as well as the thicknesses of IGZO and SiO 2 layers in TFT.

show abstract

“…For c-IGZO with m = 3, previous GGA+U calculations showed that V O is a negative-U defect [56]. The defect levels of V O vary from 1.1 to 1.5 eV above the VBM, depending on the type of neighboring atoms, indicating that all the V O defects are deep donors.…”

Section: O-vacancy In Oxide Semiconductorsmentioning

confidence: 97%