No abstract

We investigate the mechanism of off-leakage current in InGaZnO (IGZO) thinfilm transistors with the help of a two-dimensional device simulator. The deep donorlike states probably originating from the oxygen vacancies are introduced in the IGZO channel, and it is shown that these trap states significantly affect I d − V g characteristics in the off-state region through the pinning of the channel potential. A simple analytical model to explain the simulation results is proposed, which suggests that the off-leak characteristics is controlled by the amount and the depth of the deep donorlike states as well as the thicknesses of IGZO and SiO 2 layers in TFT.

Using a coupled Monte Carlo technique for solving both electron and phonon Boltzmann transport equations, the transient electrothermal simulation of nanoscale FETs is performed. It is shown that the time constants for the electron and phonon transport are different in order of magnitude, and the self-heating has little impact on digital circuit delay, while it would affect the bias temperature instability because of the long decay time of the created hot spot. The effectiveness of introducing the lightly doped drain structure is also discussed to reduce the hot spot temperature.

No abstract

No abstract