Mechanism of off-leakage current in InGaZnO thin-film transistors

Wakimura, Go; Yamauchi, Y.; Matuoka, Toshimasa; Kamakura, Yoshinari

doi:10.1109/imfedk.2014.6867062

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…Although these previous studies have pointed out the significant influence of the the deep donorlike states on the off-leakage current, its effect on the off-state I d − V g characteristics were not intensively investigated. In this study, we present an in-depth simulations to understand the behavior of off-state current as a function of the gate voltage [10], and discuss the essential mechanisms with the help of a two-dimensional device simulator. Figure 1 shows the cross-sectional view of the TFT structure simulated in this study.…”

Section: Introductionmentioning

confidence: 99%

Simulation and modeling of off-leakage current in InGaZnO thin-film transistors

Wakimura

Yamauchi

Kamakura

2015

JASSE

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We investigate the mechanism of off-leakage current in InGaZnO (IGZO) thinfilm transistors with the help of a two-dimensional device simulator. The deep donorlike states probably originating from the oxygen vacancies are introduced in the IGZO channel, and it is shown that these trap states significantly affect I d − V g characteristics in the off-state region through the pinning of the channel potential. A simple analytical model to explain the simulation results is proposed, which suggests that the off-leak characteristics is controlled by the amount and the depth of the deep donorlike states as well as the thicknesses of IGZO and SiO 2 layers in TFT.

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Section: Introductionmentioning

confidence: 99%

Simulation and modeling of off-leakage current in InGaZnO thin-film transistors

Wakimura

Yamauchi

Kamakura

2015

JASSE

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Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Lee

Chiu

et al. 2022

IEEE J. Electron Devices Soc.

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The mobility enhancement and the positive bias stress of top-gate self-aligned TFTs using the a-IGZO channel with a front barrier are investigated. The a-IGZO front barrier can keep electrons in the a-IGZO channel away from the top-gate oxide to significantly enhance the electron mobility at the top gate operation. The parasitic channel induces a hump in the transfer characteristics. The positive bias stress shifts the hump to the negative voltage abnormally. The H 2 O in the polymer film on array layer is responsible for the abnormal shift. The H 2 O diffuses into the top-gate insulator and is electrolyzed to create H + , which forms a parasitic channel with a negative shift of threshold voltage, leading to the abnormal hump. The abnormal humps are increasingly significant with the increasing channel width and the decreasing channel length. The channel width dependence on positive bias stress is due to the inverse narrow width effect caused by the fringe electric field. The channel length dependence on positive bias stress is due to the H + diffusion toward the center of the parasitic channel from both the source and drain sides.INDEX TERMS Positive bias stress (PBS), a-IGZO, hump, polymer film on array (PFA).

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Mechanism of off-leakage current in InGaZnO thin-film transistors

Cited by 2 publications

References 2 publications

Simulation and modeling of off-leakage current in InGaZnO thin-film transistors

Simulation and modeling of off-leakage current in InGaZnO thin-film transistors

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

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