Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics

Stępniewski, R.; Wysmołek, A.; Potemski, M.

doi:10.1002/pssa.200303908

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…Taking into account that the binding energy of a shallow donor in GaN is around 30-33 meV [9] and effective Coulomb interaction could be estimated to be in the order of 60 meV [4], the beryllium ionization resulting from the formula (2) is of about 92-95 meV. Since usually optical transition energies are bigger than thermal activation energies of the acceptor centers, the obtained estimation of the Be ionization energy, being in the range of 90-125 meV, seems to be consistent with the results of the temperature dependent luminescence studies.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence Study of Bulk GaN Doped with Beryllium

et al. 2005

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Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor-and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60 ± 15 meV.

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Section: Resultsmentioning

confidence: 99%

Photoluminescence Study of Bulk GaN Doped with Beryllium

et al. 2005

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“…19 Their energy positions are very close to those observed for neutral donor bound excitons in strain-free homoepitaxial layers. 29,30 Magneto-optical studies 31,32 have shown that all three of these lines split in a similar way, typical for the A exciton bound to a neutral donor in GaN. The observed energy difference between emissions in the freestanding GaN and heteroepitaxial layer makes direct comparison of the structures due to oxygen and silicon donors difficult.…”

Section: Zero-field Characteristics Of Principal D 0 X Transitiomentioning

confidence: 99%

Magnetopolaron effect on shallow donors in GaN

et al. 2006

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Resonant interaction between longitudinal-optic ͑LO͒ phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons ͑D 0 X͒. The experiments were performed on high-quality freestanding GaN material and heteroepitaxial GaN layers grown on sapphire. In addition to the principal recombination channel of D 0 X, in which donors are left in their ground states, two-electron satellites ͑TES͒ involving different excited donor excitations, as well as replicas of the principal D 0 X transition due to LO phonons, were observed for the oxygen and silicon donors. In order to separate transitions involving ground and excited D 0 X states, variable-temperature experiments were performed. The application of high magnetic fields allows tuning of the donor excitations into resonance with the LO phonon energy. This results in a strong enhancement of TES intensity and the appearance of several anticrossing processes in the vicinity of a LO phonon replica of the principal D 0 X transition. The observed behavior is explained in terms of a resonant interaction between LO phonons and donor-bound electrons ͑magnetopolaron effect͒. The experimental data are described using a phenomenological model that combines the theory of a hydrogen atom in a magnetic field with a model which includes the effects of nonparabolicity, nonresonant polaron corrections, and the resonant magnetopolaron effect on electrons bound to donors. It was found that the interaction in the resonant magnetopolaron regime is stronger for the oxygen than for the silicon donor.

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Cathodoluminescence study of single zinc oxide nanopillars with high spatial and spectral resolution

Schirra

Reiser

Prinz

et al. 2007

Journal of Applied Physics

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Single zinc oxide (ZnO) nanopillars grown by the vapor-liquid-solid process on a-plane sapphire are investigated by spatially resolved cathodoluminescence on the nanometer scale in a scanning electron microscope. Spectra were recorded by exciting luminescence along single pillars and across the underlying wetting layer. Luminescence from the excited pillar spots exhibited sharp bound exciton lines and intrinsic free-exciton recombination, whereas the wetting layer showed only very weak luminescence. Along the pillars, virtually no shift of the lines was observed. This is interpreted as evidence for strain-free growth of the pillars. In the bottom region of the pillars aluminum incorporation from the substrate material was found. There are indications for an incorporation of gallium along the pillars due to unintentional doping introduced by the source material. The spot-resolved results are compared to integral photoluminescence measurements with large-area excitation carried out on the same sample region.

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Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics

Cited by 4 publications

References 13 publications

Photoluminescence Study of Bulk GaN Doped with Beryllium

Photoluminescence Study of Bulk GaN Doped with Beryllium

Magnetopolaron effect on shallow donors in GaN

Cathodoluminescence study of single zinc oxide nanopillars with high spatial and spectral resolution

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