Valence instability is a key ingredient of the unusual properties of f electron materials, yet a clear understanding is lacking as it involves a complex interplay between f electrons and conduction states. Here we propose a unified picture of pressure-induced valence transition in Sm and Yb monochalcogenides, considered as model system for mixed valent 4f -electron materials. Using high-resolution x-ray absorption spectroscopy, we show that the valence transition is driven by the promotion of a 4f electron specifically into the lowest unoccupied (LU) 5d t2g band. We demonstrate with a promotional model that the nature of the transition at low pressures is intimately related to the density of states of the LU band, while at high pressures it is governed by the hybridization strength. These results set a new standard for the generic understanding of valence fluctuations in f -electron materials. PACS numbers: 71.20.Eh, 78.70.Ck, 75.20.Hr Valence fluctuations play an essential role in some of the f -electron systems most exciting behaviors, such as quantum criticality and unconventional superconductivity [1,2]. But their understanding has proven challenging to capture in a unified theory because they arise from subtle many-body interactions between the f electrons and the conduction states [3,4]. Pressure on the other hand is an efficient way to act on f -electron interactions and localization and thus can serve as a window onto the f -electron physics. Notably, the pressure-induced valence transition of the lanthanide monochalcogenides is a paradigmatic illustration of f delocalization phenomena and their tremendous diversity. For instance, SmS undergoes a first-order transition to near-trivalency coinciding with the onset of magnetic ordering [5], whereas the transition of YbS into an intermediate-valent correlated metal is extremely sluggish [6]. These diverse behaviors, while establishing a severe test bed for theoretical understanding of f -electron systems, have been overlooked for the past decades. Here, we address them in the light of a direct measurement of the electronic structure of Sm and Yb monochalcogenides (SmS, SmSe, SmTe, YbS, YbSe) under pressure performed using highresolution x-ray absorption spectroscopy in the partial fluorescence yield (PFY-XAS) mode. Our data reveal that the valence discontinuity and concomitant closing of the gap under pressure are caused by the specific filling of the lowest unoccupied (LU) 5d t 2g band by a 4f electron, offering a unified picture of electron delocalization and intermediate valency. Using a promotional model, we show that both the steepness and the amplitude of the valence transition of the Sm compounds increase with the density of states (DOS) of this LU band. When exceeding a critical DOS, the transition becomes first order for SmS. The model fails to describe the prolonged transition of the Yb compounds, which suggests that at high pressures the valence transition is impeded by enhanced hybridization. Ultimately, we suggest that our analysis can serve ...