Abstract:Abstract:The electronic structures and optical properties of the monoclinic ZrO 2 (m-ZrO 2 ) are investigated by means of first-principles local density approximation (LDA) + U approach. Without on-site Coulomb interactions, the band gap of m-ZrO 2 is 3.60 eV, much lower than the experimental value (5.8 eV). By introducing the Coulomb interactions of 4d orbitals on Zr atom (U d ) and of 2p orbitals on O atom (U p ), we can reproduce the experimental value of the band gap. The calculated dielectric function of … Show more
“…We observed an increase in εr from ~3 (thermally treated ZrO2) to ~7.5 when UV-A treatment is prolonged. The values reported here agrees with the earlier reports [44,45]. Moreover, no critical feature appears in the εi spectra, which again confirms the absence of any crystalline phase present in the films.…”
Section: Optical Constants From Spectroscopic Ellipsometry (Se)supporting
An environmentally friendlier solution processing has been introduced to fabricate zirconium oxide (ZrO2) films on quartz substrates, using spin coating of simple water-based solution. The films cured with UV-A = 330 nm for different times (40, 80, 120 min) were investigated for structural and optical properties and compared with thermally annealed film (at 350 °C). XRD and Raman spectroscopy showed amorphous structure in all the samples with no significant phase transformation with UV-A exposure. AFM microscopy showed smooth and crack free films with surface roughness ≤2 nm that reduced with UV-A exposure. Ultraviolet-visible (UV–Vis) spectroscopy demonstrated optical transmittance ≥88% and energy band gap variations as 4.52–4.70 eV. Optical constants were found from spectroscopic ellipsometry (SE). The refractive index (n) values, measured at 470 nm increased from 1.73 to 2.74 as the UV-A exposure prolonged indicating densification and decreasing porosity of the films. The extinction coefficient k decreased from 0.32 to 0.19 indicating reduced optical losses in the films under the UV-A exposure. The photoluminescence (PL) spectra exhibited more pronounced UV emissions which grew intense with UV-A exposure thereby improving the film quality. It is concluded that UV-A irradiation can significantly enhance the optical properties of ZrO2 films with minimal changes induced in the structure as compared to thermally treated film. Moreover, the present work indicates that water-based solution processing has the potential to produce high-quality ZrO2 films for low cost and environmental friendlier technologies. The work also highlights the use of UV-A radiations as an alternate to high temperature thermal annealing for improved quality.
“…We observed an increase in εr from ~3 (thermally treated ZrO2) to ~7.5 when UV-A treatment is prolonged. The values reported here agrees with the earlier reports [44,45]. Moreover, no critical feature appears in the εi spectra, which again confirms the absence of any crystalline phase present in the films.…”
Section: Optical Constants From Spectroscopic Ellipsometry (Se)supporting
An environmentally friendlier solution processing has been introduced to fabricate zirconium oxide (ZrO2) films on quartz substrates, using spin coating of simple water-based solution. The films cured with UV-A = 330 nm for different times (40, 80, 120 min) were investigated for structural and optical properties and compared with thermally annealed film (at 350 °C). XRD and Raman spectroscopy showed amorphous structure in all the samples with no significant phase transformation with UV-A exposure. AFM microscopy showed smooth and crack free films with surface roughness ≤2 nm that reduced with UV-A exposure. Ultraviolet-visible (UV–Vis) spectroscopy demonstrated optical transmittance ≥88% and energy band gap variations as 4.52–4.70 eV. Optical constants were found from spectroscopic ellipsometry (SE). The refractive index (n) values, measured at 470 nm increased from 1.73 to 2.74 as the UV-A exposure prolonged indicating densification and decreasing porosity of the films. The extinction coefficient k decreased from 0.32 to 0.19 indicating reduced optical losses in the films under the UV-A exposure. The photoluminescence (PL) spectra exhibited more pronounced UV emissions which grew intense with UV-A exposure thereby improving the film quality. It is concluded that UV-A irradiation can significantly enhance the optical properties of ZrO2 films with minimal changes induced in the structure as compared to thermally treated film. Moreover, the present work indicates that water-based solution processing has the potential to produce high-quality ZrO2 films for low cost and environmental friendlier technologies. The work also highlights the use of UV-A radiations as an alternate to high temperature thermal annealing for improved quality.
“…The cell structure has four 4-fold O and three 3-fold O atoms around one Zr atom. The optimized lattice parameters, a = 5.17 Å, b = 5.23 Å, c = 5.36 Å, and θ = 99.28°, are in good agreement with the theoretical 31–33 and experimental results. 34 The slab-building technique was applied to create the ZrO 2 surfaces and to study the adsorption of CO.…”
The Ni/ZrO2, Ni/Mg(Al)O, and Ni/SiO2 catalysts were employed in the CO2 methanation. The catalysts were characterized by XPS, XRF, XRD (Rietveld refinement method), TPR, EPR, BET, CO2+H2-TPSR, CO+H2-TPSR, CO2-TPD, CO-TPD,...
“…In this regard, Li et al . 11 used Hubbard correction (DFT + U) approach as an alternative to accurately investigate the electronic and optical properties of monoclinic ZrO 2 with a good agreement with the experimental findings while avoiding the excessive cost of the hybrid functional calculations. Generally, applying the Hubbard correction to wide band gap materials with 3d or 4d orbitals was found to accurately determine the materials properties 12 .…”
Monoclinic ZrO
2
has recently emerged as a new highly efficient material for the photovoltaic and photocatalytic applications. Herein, first-principles calculations were carried out to understand how Hydrogen doping can affect the electronic structure and optical properties of the material. The effects of Hydrogen interstitial and substitutional doping at different sites and concentrations in m-ZrO
2
were examined by an extensive model study to predict the best structure with the optimal properties for use in solar energy conversion devices. Hydrogen interstitials (Hi) in pristine m-ZrO
2
were found to lower the formation energy but without useful effects on the electronic or optical properties. Hydrogen mono- and co-occupying oxygen vacancy (Ov) were also investigated. At low concentration of Hydrogen mono-occupying oxygen vacancy (HOv), Hydrogen atoms introduced shallow states below the conduction band minimum (CBM) and increase the dielectric constant, which could be very useful for gate dielectric application. The number and position of such defect states strongly depend on the doping sites and concentration. At high oxygen vacancy concentration, the modeled HOv-Ov structure shows the formation of shallow and localized states that are only 1.1 eV below the CBM with significantly high dielectric constant and extended optical absorption to the infrared region. This strong absorption with the high permittivity and low exciton binding energies make the material an ideal candidate for use in solar energy harvesting devices. Finally, the band edge positions of pristine and doped structures with respect to the redox potentials of water splitting indicated that Hydrogen occupying oxygen vacancies can increase the photocatalytic activity of the material for hydrogen generation due the extremely improved optical absorption and the band gap states.
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