Electronic transitions in silica glass during heavy-ion implantation

Plaksin, О.А.; Takeda, Yoshihiko; Okubo, Nariaki; Amekura, H.; Kono, K.; Umeda, N.; Kishimoto, Naoki

doi:10.1016/j.tsf.2004.05.110

Cited by 7 publications

(4 citation statements)

References 11 publications

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“…This suggests that the formation of metallic Ni nanoparticles in sapphire single crystals is very sensitive to the ion current density just as the Cu nanoparticle formation in silica glass. 5 The ion current density of 5 A/cm 2 may be a proper implantation parameter to form Ni nanoparticles in sapphire at room temperature. The growth of metallic Ni nanoparticles mainly occurred at an annealing temperature of ϳ800°C in samples after ion implantation at a current density of 5 A/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the nucleation and growth of nanoparticles in ion-implanted substrates are affected by many parameters, such as ion fluence, current density ͑ion flux͒, implantation temperature, post-implantation annealing temperature, and atmosphere. [5][6][7] Fabrication and annealing effects on optical properties of metallic nickel nanoparticles embedded in silica glass have been studied. [8][9][10] Recently, we have fabricated metallic nickel nanoparticles embedded in a sapphire ͑␣-Al 2 O 3 ͒ single crystal and observed a broad absorption band peaked at 400 nm, which has been ascribed to the surface plasmon resonance absorption of Ni nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

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Optical properties and structure characterization of sapphire after Ni ion implantation and annealing

Bao

et al. 2005

Journal of Applied Physics

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Implantation of 64 keV Ni ions to sapphire was conducted at room temperature to 1 ϫ 10 17 ions/ cm 2 with a current density of 5 or 10 A/cm 2. Metallic Ni nanoparticles were formed with the 5 A/cm 2 ion current and the NiAl 2 O 4 compound was formed with the 10 A/cm 2 ion current. The crystals implanted with both current densities were annealed isochronally for 1 h at temperatures up to 1000°C in steps of 100°C in an ambient atmosphere. Optical absorption spectroscopy, x-ray diffraction, transmission electron microscopy ͑TEM͒, and x-ray photoelectron spectroscopy have been utilized to characterize the samples. The surface plasmon resonance ͑SPR͒ absorption band peaked at 400 nm due to the Ni nanoparticles shifted toward the longer wavelength gradually with the annealing temperature increasing from 400 to 700°C. The SPR absorption band disappeared after the annealing temperature reached 800°C. NiO nanoparticles were formed at the expense of Ni nanoparticles with an increasing annealing temperature. The TEM analyses revealed that the nanoparticles grew to 6-20 nm and migrated toward the surface after annealing at 900°C. The absorption band at 430 nm from Ni 2+ cations in NiAl 2 O 4 did not shift with the increasing annealing temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical properties and structure characterization of sapphire after Ni ion implantation and annealing

Bao

et al. 2005

Journal of Applied Physics

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“…Spectra of optical absorption were measured during ion implantation, with the same method as reported in Ref. 7. In particular, the spectra were corrected to eliminate socalled transient defect absorption at 2.34 eV observed during irradiation.…”

Section: Radiation-induced Differential Optical Absorption Of Metal Nmentioning

confidence: 99%

“…In particular, the spectra were corrected to eliminate socalled transient defect absorption at 2.34 eV observed during irradiation. 7 Ion implantation was interrupted several times in order to compare spectra during and after irradiation, and, subsequently, to obtain differential spectra in the range of SPR.…”

Section: Radiation-induced Differential Optical Absorption Of Metal Nmentioning

confidence: 99%

Radiation-induced differential optical absorption of metal nanoparticles

Plaksin

Takeda

Amekura

et al. 2006

Applied Physics Letters

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A method of measuring the temperature of metal nanoparticles under ion bombardment is proposed. Optical absorption in the range of the surface plasmon resonance of metal nanoparticles was measured during implantation of 3MeV Cu2+ ions into silica glass to derive a difference in optical absorption between beam on and off regimes. The radiation-induced differential (RD) spectra were similar to the spectra of thermomodulation (TM) and quite different from the spectra of nonlinear optical response measured by the pump-probe method. Increasing amplitude of RD and TM spectra was assigned to an increase of lattice temperature of Cu nanoparticles.

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Study of copper-doped SiO2 films prepared by co-sputtering of copper and SiO2

Wang

Jou

2008

Journal of Physics and Chemistry of Solids

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Electronic transitions in silica glass during heavy-ion implantation

Cited by 7 publications

References 11 publications

Optical properties and structure characterization of sapphire after Ni ion implantation and annealing

Optical properties and structure characterization of sapphire after Ni ion implantation and annealing

Radiation-induced differential optical absorption of metal nanoparticles

Study of copper-doped SiO2 films prepared by co-sputtering of copper and SiO2

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