Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures

Abstract

Motivated by recent studies on the use of graphene for new concepts of electronic/spintronic devices, the authors develop an efficient calculation method based on the nonequilibrium Green’s function to solve the quantum relativisticlike Dirac’s equation that governs the low-energy excited states in graphene. The approach is then applied to investigate the electronic transport and the spin polarization in a single-graphene barrier structure. The obtained results are presented and analyzed in detail aiming to highlight typical properties of the considered graphene structure as well as the efficiency of the developed approach that both may be helpful for further development in electronic devices and in spintronics.

Resonant tunnelling and negative differential conductance in graphene transistors

“…Several different mechanisms by which NDC can be generated in graphene-based devices have been modelled theoretically, for example, 31827. The observation of NDC in a graphene field effect tunnel transistor in which the current flows along the graphene layer was also reported recently.…”

“…Devices based on these materials have been investigated in a number of recent experimental and theoretical papers2345678910111213141516171819202122232425262728. By fine-tuning the composition of the stacks, it may be possible to create materials with novel electronic and optical properties, which outperform conventional semiconductors.…”

Study of Nitrogen terminated doped zigzag GNR FET exhibiting negative differential resistance

“…Due to ambipolar transport behavior of Graphene, NDR has been observed and reported in various three terminal GNR devices [14]. Previously single-gate Graphene sheet junctions have also shown negative differential resistance [15]. Negative differential resistance was also discovered in arm chair GNR junction [16,17], and the arm chair GNR junction has been examined for its suitability in tunneling diodes [17].…”

Controllable spin polarization and spin filtering in a zigzag silicene nanoribbon

“…[15][16][17][18][19][20][21][22][23][24][25][26], but there are a few theoretical studies for these subjects in silicene. 12,[27][28][29][30][31][32][33][34][35] Giant magnetoresistance (GMR) in a zigzag silicene nanoribbon connecting to two silicene sheets has been predicted by Xu et al 12 Using first principle calculations, Tsai et al have shown that a gated silicene quantum point contact can be used a tunable spin polarizer with 98% spin polarization.…”