Electronic transport in Si–SiO2 nanocomposite films

Ciurea, Magdalena Lidia; Teodorescu, V. S.; Iancu, V.; Balberg, I.

doi:10.1016/j.cplett.2006.03.070

Cited by 23 publications

(17 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the tunneling current is much smaller than the conduction one, this term is neglected in nc-PS. In MQW, the mean bias is much smaller than the barrier bias Ũ < < U b u/e (/ being the barrier height), so that the tunneling is described by the Simmons high field-assisted tunneling formula [25] …”

Section: Ocs Modelingmentioning

confidence: 99%

Trapping phenomena in silicon-based nanocrystalline semiconductors

Ciurea

Iancu

Mitroi

2007

Solid-State Electronics

Self Cite

View full text Add to dashboard Cite

Section: Ocs Modelingmentioning

confidence: 99%

Trapping phenomena in silicon-based nanocrystalline semiconductors

Ciurea

Iancu

Mitroi

2007

Solid-State Electronics

Self Cite

View full text Add to dashboard Cite

“…In order to nucleate silicon nanocrystalites (nc-Si) in the amorphous silicon dioxide (a-SiO2), the films were annealed at 1100°C in N2 atmosphere. This way, the obtained Si -SiO2 samples have variable nc-Si volume concentration (from x z 0 to 100%), while the mean nanodot diameters vary slowly with the concentration [3]. 50 parallel Al electrodes in a coplanar configuration were deposited on the Si -SiO2 film.…”

Section: Preparation and Microstructurementioning

confidence: 99%

“…The Si -SiO2 nanocomposite films were prepared by co-sputtering silicon and silicon dioxide on a quartz target [3,11]. In order to nucleate silicon nanocrystalites (nc-Si) in the amorphous silicon dioxide (a-SiO2), the films were annealed at 1100°C in N2 atmosphere.…”

Section: Preparation and Microstructurementioning

confidence: 99%

“…For instance, the Ohmic conduction and the surface states contributions were discussed for silicon nanowires [1]. For nanocrystalline porous silicon (nc-PS), Poole-Frenkel tunneling was proposed [2], while high field-assisted tunneling was proved as the proper mechanism for Si -SiO2 nanocomposites -nanocrystalline silicon (nc-Si) embedded in an amorphous silicon dioxide matrix (a-SiO2) [3].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Percolation Phenomena in Silicon - Based Nanocrystalline Systems

Lepadatu

Rusnac

Stavarache

2007

2007 International Semiconductor Conference

View full text Add to dashboard Cite

show abstract

“…Since the hopping-like aspect is provided by the Eq. (4.7)-like behavior, this Arrhenius-like behavior is very likely (in view of the above-mentioned effect of illumination and doping) to reflect a thermal excitation of the charge carriers to the conducting levels, which may or may not be associated with QC effects [9,56,114]. We are thus left, at present, with a scenario that includes one or a combination of the single barrier [42] or the collective [44] hopping processes, as well as a carrier concentration excitation process, thus yielding the apparent monotonic change of c and/or d as described above.…”

Section: The High-x Regimementioning

confidence: 99%

Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites

Balberg

2010

Silicon Nanocrystals

View full text Add to dashboard Cite

While the optical [1][2][3] properties of various ensembles of individual Si nanocrystallites (NCs) and the memory-charge storage (CS) characteristics of two-dimensional (2D) arrays of Si NCs [4] have been investigated by many researchers, relatively little attention was paid to the transport properties of 3D ensembles of such quantum dots (QDs) [5]. The interest in the last systems, however, is expected to follow the new basic physics that it reveals and the potential applications of such systems. Following the reasonable (though still controversial [6]) understanding of granular metals [7,8], where the electrical conduction takes place via metallic particles, additional significant insights into the transport mechanism [5,9] and new phenomena are expected in Si NCs due to the presence of confined levels [10]. In particular, the combination of Coulomb blockade (CB) effects and the quantum confinement (QC) restrictions can yield various resonant tunneling effects [11] as well as various quantum phase transformations [12] that are beyond the scope of this chapter. From the application point of view, one realizes that significant electroluminescence (EL) can come about only as a result of efficient transport in 3D ensembles of Si NCs [4,13,14] that are dense enough to yield strong light emission. Finding the conditions for the optimization of the luminescence and the transport is then the route to achieve efficient Si-based photoelectronic devices [15].In this chapter, we present a review on the electrical transport in the ensembles of Si NCs. Since we are concerned with the transport in 3D ensembles of quantum dots, we will only briefly review the main results obtained from lower dimensional ensembles (i.e., 1D-like [16, 17] or perpendicular to 2D arrays [18][19][20][21]) of Si QDs in order to provide a reference for the effects of the small size of the single Si NCs on the transport in ensembles of larger dimensions. We will see that in spite of many studies of these 0D-like and 2D systems, which are essentially associated with single isolated NCs, and their potential use as nonvolatile memories, only the basics of the Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

show abstract

Electronic transport in Si–SiO2 nanocomposite films

Cited by 23 publications

References 19 publications

Trapping phenomena in silicon-based nanocrystalline semiconductors

Trapping phenomena in silicon-based nanocrystalline semiconductors

Percolation Phenomena in Silicon - Based Nanocrystalline Systems

Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites

Contact Info

Product

Resources

About