Electronic transport properties of graphene with Stone-Wales defects and multiple vacancy chains: a theoretical study

Various defects in graphene: a review

“… 128 The single vacancy and SW defects could decrease the current through the graphene nanodevices using the ballistic transport model, accompanied by defect-induced electron transmission peaks, 129 signifying that this method can hopefully be used to study the influence of multiple vacancy chains on the electronic transport properties of graphene nanodevices. 130 For the zigzag-direction loading, slip nucleates in the SW defect through the formation of two pentagons and a twisted hexagon. In contrast, for the armchair-direction loading, healing, generation, and pentagon–heptagon pair separation of the SW defect occur via 90° rotation of the C–C bond.…”

“…57,87,141,163,164 The presence of more than one vacancy and their mutual relationship signicantly alters the magnetization phenomenon in graphene because of the creation of sublattice imbalance. 75,165,166 Wang et al 130 systematically investigated the electronic transport properties of various defects in graphene, such as SW defect, SV, DV, and multiple vacancy chains using rst-principles calculations combined with the nonequilibrium Green's function method. They found that some defect-induced electronic states can enormously enhance the transport of electrons between electrodes at certain energy levels.…”

Computational Study of Low-Energy Pt-Ion Implantation into Graphene for Single-Atom Catalysis

“…The relaxed configuration of a SV or DV is a 5−9 or 5−8−5 reconstructed planar structure, respectively, as shown in Figure 6a,b, and E f (SV) is even slightly larger than E f (DV), in accordance with previous studies. 49,50 When Pt is anchored at a SV or DV defect, it is a little out of the graphene layer because of its rather large atomic radius (Figure 6c,d). Note that E b (Pt-SV) and E b (Pt-DV) are as high as 7.47 and 6.89 eV, respectively (Table 1); thus, Pt-SV and Pt-DV compounds are extremely stable and hardly separate even at high temperatures, as observed in the above MD simulations.…”

Environment-Dependent Radiation Tolerance of Graphene Transistors under Proton Irradiation

“…According to previous reports, nuclear collision will induce the lattice defects in graphene, including vacancies, Stone− Wales defects, and adsorbed atoms, which have influence on the electrical performance of GFETs. 22 The structural defects caused by proton irradiation in graphene may lead to the degradation of GFET performance, such as the reduction of mobility. However, considering that the performance of the GFETs nearly totally recovers in 3 h (as shown in Figure 3c,d) and that the structural defects in graphene cannot completely recover in such a short time at room temperature, the effect of the nuclear collision should not be the reason for the performance degradation when the ion fluence is not higher than 8 × 10 11 cm −2 .…”

“…According to previous reports, nuclear collision will induce the lattice defects in graphene, including vacancies, Stone–Wales defects, and adsorbed atoms, which have influence on the electrical performance of GFETs . The structural defects caused by proton irradiation in graphene may lead to the degradation of GFET performance, such as the reduction of mobility.…”