Electronic transport properties of quasicrystalline thin films

Haberkern, R.; Khedhri, K.; Madel, C; Häußler, P.

doi:10.1016/s0921-5093(00)01067-4

Cited by 40 publications

(20 citation statements)

References 11 publications

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“…Icosahedral AlPdRe alloys possess the highest values of the electrical resistivity and the negative temperature coefficient among all the icosahedral phases. [8][9][10][11] We found that decreasing atomic density with increasing concentration of TM ͑either Pd or Re͒ might reveal the enhancement of the covalent bonding nature between the Al and TM. 12 Therefore the AlPdRe icosahedral phase seems to possess more remarkable features of covalent bonds and semiconductor-like properties than any other icosahedral quasicrystal.…”

Section: Introductionmentioning

confidence: 99%

Composition dependence of thermoelectric properties of AlPdRe icosahedral quasicrystals

Kirihara

Kimura

2002

Journal of Applied Physics

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Observation of metal-insulator transition in Al-Pd-Re quasicrystals by x-ray absorption and photoemission spectroscopy Appl.We present the composition dependence of the Seebeck coefficient and the electrical conductivity of AlPdRe icosahedral alloys. As the concentration of transition metal ͑either Pd or Re͒ increases, the Seebeck coefficient rapidly increases. The strong composition dependence is related to the pseudogap structure in the electron density of states at the Fermi energy, and to the variation in bonding nature between Al and transition metal. Glass-like transport behavior in thermal conduction is also observed. The dimensionless thermoelectric figure of merit has a maximum value of approximately 0.1 in the temperature range from 600 to 700 K and reveals strong composition dependence.

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Section: Introductionmentioning

confidence: 99%

Composition dependence of thermoelectric properties of AlPdRe icosahedral quasicrystals

Kirihara

Kimura

2002

Journal of Applied Physics

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“…Fourth, the S(T) curves exhibit well-defined extrema in several cases. For example, high-quality samples belonging to the system i-AlCu(Fe,Ru) show S(T) well-defined extrema in the temperature range 80-250 K. 26 -31 The presence of broad maxima has been recently observed in highquality i -AlPd(Mn,Re) samples at temperatures above ϳ500 K. 37,38,42 Both the magnitude and position of these extrema are extremely sensitive to minor variations in the chemical stoichiometry of the sample. Fifth, for a given sample stoichiometry, the thermopower shows a strong dependence on the annealing conditions induced onto the sample during the synthesis process.…”

Section: Thermoelectric Power Of Icosahedral Quasicrystalsmentioning

confidence: 99%

“…[25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Reported data refer to a broad range of stoichiometric compositions and cover different temperature ranges in the interval from 1 to 900 K. From the collected data the following general conclusions can be drawn. First, the thermoelectric power usually exhibits large values when compared to those of both crystalline and disordered metallic systems.…”

Section: Thermoelectric Power Of Icosahedral Quasicrystalsmentioning

confidence: 99%

Thermoelectric properties of icosahedral quasicrystals: A phenomenological approach

Maciá

2003

Journal of Applied Physics

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In this work, we introduce a phenomenological model describing the thermoelectric power of icosahedral quasicrystals. On the basis of a realistic model for the spectral conductivity, obtained from ab initio band-structure calculations ͓C. Landauro and H. Solbrig, Physica B 301, 267 ͑2000͔͒, we derive a closed analytical expression for the Seebeck coefficient, satisfactorily describing its temperature dependence S(T) over a wide temperature range. We introduce four phenomenological coefficients relating the electronic structure to characteristic features of the experimental S(T) curves. By comparing our analytical results with available experimental data we relate the sensitivity of the thermopower curve to minor variations in the chemical composition to a systematic shift of the Fermi-level position.

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“…This alone indicates there is no one to one correspondence between the RRR and σ(T ). Even more interesting are the measurements of the Hall coefficient and the Hall mobility of thin films as a function of their Al content [48]. When the Al content increases from 69 to 76 at.%, the RRR goes through a maximum for 72.5 at.% Al whereas the Hall coefficient changes its sign precisely at this composition.…”

Section: Non Universal Behavior Of Highly Resistive I-alpdre Samplesmentioning

confidence: 99%

The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal

Delahaye

Berger

2015

Eur. Phys. J. B

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The icosahedral (i-) AlPdRe is the most resistive quasicrystalline alloy discovered so far. Resistivities (ρ) of 1Ωcm at 4K and correlated resistance ratios (RRR = ρ4K /ρ300K ) of more than 200 are observed in polycrystalline samples. These values are two orders of magnitude larger than for the isomorphous i-AlPdMn phase. We discuss here the controversial microscopic origin of the i-AlPdRe alloy electrical specificity. It has been proposed that the high resistivity values are due to extrinsic parameters, such as secondary phases or oxygen contamination. From comprehensive measurements and data from the literature including electronic transport correlated with micro structural and micro chemical analysis, we show that on the contrary there is mounting evidence in support of an origin intrinsic to the i-phase. Similarly to the other quasicrystalline alloys, the electrical resistivity of the i-AlPdRe samples depends critically on minute changes in the structural quality and chemical composition. The low resistivity in i-AlPdRe single-grains compared to polycrystaline samples can be explained by difference in chemical composition, heterogeneity and thermal treatment.

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Electronic transport properties of quasicrystalline thin films

Cited by 40 publications

References 11 publications

Composition dependence of thermoelectric properties of AlPdRe icosahedral quasicrystals

Composition dependence of thermoelectric properties of AlPdRe icosahedral quasicrystals

Thermoelectric properties of icosahedral quasicrystals: A phenomenological approach

The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal

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