Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys

Kumar, Arun; Singh, Vipenpal; Singh, Harkawal; Sharma, Pankaj; Goyal, Navdeep

doi:10.1016/j.physb.2018.11.044

Cited by 11 publications

(1 citation statement)

References 18 publications

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“…At lower temperatures the dielectric constant increases slowly and then increases more with increasing temperature. The same results was obtained for all the studied compositions and similar to results obtained before [40,35,36,32].…”

Section: -The Dependence Of Ac Conductivity On Temperaturesupporting

confidence: 90%

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Shakra

Fadel

Kalila³

2021

Preprint

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Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by melting quenching method. Thin films of various thicknesses (200 – 670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investigated by X-ray and EDX analysis. We studied the effect of Zn and Cd addition on the electric and dielectric properties of Se98Te2 thin films. Our measurements were studied in the temperature range (298-323K) below the glass transition temperature and frequency range (100 Hz-1 MHz). DC conductivity showed a single conduction mechanism by hopping of charge carriers at the band edges for the studied system. The dependence of Ac conductivity on frequency is linear with frequency exponent s lies very close to unit and is independent of temperature. This can be explained by the correlated barrier hopping (CBH) model. The dielectric constant ε1 and dielectric loss ε2 noticed to decrease with frequency and increase with temperature. The maximum barrier height Wm was calculated according to Guinitin.

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Section: -The Dependence Of Ac Conductivity On Temperaturesupporting

confidence: 90%

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Shakra

Fadel

Kalila³

2021

Preprint

View full text Add to dashboard Cite

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Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Singh

Lohia

Dwivedi

2019

J Mater Sci: Mater Electron

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Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides

Shakra

Fadel

Kalila

2021

J Mater Sci: Mater Electron

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Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys

Cited by 11 publications

References 18 publications

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides

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Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys

Cited by 11 publications

References 18 publications

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Estimation of The Electrical and Dielectric Properties For Se98Te2 and Se96Te2X2 (X = Zn and Cd) Amorphous Films.

Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Estimation of the electrical and dielectric properties for Se98Te2 and Se96Te2X2 (X = Zn and Cd) chalcogenides

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Product

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Electronic transport properties of (Se80Te20)100−xZnx (2 ≤ x ≤ 6) chalcogenide alloys