Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators

Sundaresan, K.; Ho, G.K.; Pourkamali, Siavash; Ayazi, Farrokh

doi:10.1109/jssc.2007.896521

Cited by 103 publications

(47 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This value is subject to change if the device is attached onto another structure. For this reason, passive temperature compensation methods previously developed for MEMS resonators [21][22][23]25] are not sufficient to compensate for temperature sensitivity as these usually address temperature sensitivity to material properties and device dimensions only. The following section will describe the dual resonator approach further in order to address this issue.…”

Section: B Temperature Sensitivitymentioning

confidence: 99%

“…Various techniques such as using a thermometer [21], micro-ovenization [22], multi-layers with different thermal coefficients [23,24], degenerate-doping [25] and dual-mode [26] approaches have been applied to compensate for temperature effects in MEMS resonators and oscillators. However, in the context of a strain gauge, the above [27] on the resonator as these usually address only the variations in material properties and not the variations resulting from the packaging of the sensor to ensure effective and adequate strain transfer from the host structure.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Erbes

Yan

et al. 2016

J. Microelectromech. Syst.

View full text Add to dashboard Cite

Abstract-This paper describes a technical approach towards the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer and low-pass filter are designed and fabricated in a standard 0.35µm CMOS process. The characterized devices demonstrate a scale factor of 2.8Hz/µε over a strain range of 1000µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3µW from a 1.2V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.

show abstract

Section: B Temperature Sensitivitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Erbes

Yan

et al. 2016

J. Microelectromech. Syst.

View full text Add to dashboard Cite

show abstract

“…In 1967, the resonant gate transistor was presented as a micromachined integrated frequency source [11]. Since then, and particularly recently, there has been a plethora of academic reports on silicon MEMS microresonators for frequency synthesis, including [12]- [19]. Further, nanoscale resonators are now being explored such as those in [20].…”

mentioning

confidence: 99%

A 25-MHz Self-Referenced Solid-State Frequency Source Suitable for XO-Replacement

McCorquodale¹,

Carichner²,

O'Day³

et al. 2009

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

“…Consequently, integrating crystal oscillators (XOs) has become a research target for the developers of MEMS microresonators. Recent and representative examples of MEMS oscillators include [1] and [2]. Unfortunately, MEMS microresonators introduce certain challenges including limited power-handling capability [2].…”

mentioning

confidence: 99%

“…In comparison, the CMOS implementation in [4] exhibits 3100 and 8400ppm frequency error due to supply and temperature respectively. The MEMS-referenced approach in [1] exhibits 39 or 334ppm frequency error over temperature, depending on the compensation technique.…”

mentioning

confidence: 99%

A 0.5-to-480MHz Self-Referenced CMOS Clock Generator with 90ppm Total Frequency Error and Spread-Spectrum Capability

McCorquodale

Pernia

O'Day

et al. 2008

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

View full text Add to dashboard Cite

The quartz crystal (XTAL) oscillator is one of the last components in electronic systems that has yet to be integrated. Consequently, integrating crystal oscillators (XOs) has become a research target for the developers of MEMS microresonators. Recent and representative examples of MEMS oscillators include [1] and [2]. Unfortunately, MEMS microresonators introduce certain challenges including limited power-handling capability [2]. The limitations of MEMS have resulted in recent work, e.g., [3] and [4], exploring the limits of compensated CMOS oscillators as an alternative solution. The advent of RF CMOS circuits and associated advances in CMOS process technology have enabled the development of low-noise integrated LC oscillators (LCOs) [5], which are suitable for replacing XOs in USB applications [3]. This work demonstrates a self-referenced CMOS LCO, or CMOS harmonic oscillator (CHO), that exhibits 90ppm total frequency error over process, bias and temperature, thus making it suitable for replacing XOs in many applications. Additionally, the clock generator can be configured to produce a number of different output frequencies, has 1/4 of the frequency error of the oscillator in [3] and includes a direct modulation technique enabling SSCG. Figure 19.6.1 illustrates the CHO, which exhibits a self-oscillation frequency of 960MHz. A 13b binary-weighted array of MiM capacitors and ring-transistor switches enables the oscillation frequency to be trimmed ±6% with 15ppm resolution. The trimming coefficient is determined during test via an on-chip frequency-locked loop (FLL), in which deep counters for the CHO and a precision reference clock discriminate the frequency error and update the CHO trimming coefficient, as described in [3]. The FLL is controlled by on-chip logic that converges to the optimal trimming coefficient within 100ms by using a binary search algorithm. Additionally, the thin-film capacitor array enables direct modulation of the CHO frequency via a frequency-divided image of itself, thus permitting SSCG without a modulating PLL. The spread rate and depth are controlled digitally by the divide ratio utilized to generate the modulating clock and the capacitor array step size, respectively. The TC of the CHO, which is nearly linear and negative due to the coil loss [3], is compensated via a programmable 6b accumulation-mode MOS (A-MOS) varactor array. When compensation is enabled, the appropriate varactors are connected to a positive linear temperature-dependent voltage, v ctrl (T), and the remaining varactors are connected to the 2.5V power supply. Amplitude control (AC) and common-mode control (CMC) loops minimize frequency drift due to bias variation and device degradation. Long-term frequency drift, or aging, can originate from oxide breakdown and hot carrier mechanisms. Addressing these mechanisms, the AC loop limits the maximum voltage excursion across the passive and active devices, and the CMC loop prevents frequency drift due to device threshold voltage shift induced by hot carriers trapped in th...

show abstract

Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators

Cited by 103 publications

References 11 publications

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

Vacuum Packaged Low-Power Resonant MEMS Strain Sensor

A 25-MHz Self-Referenced Solid-State Frequency Source Suitable for XO-Replacement

A 0.5-to-480MHz Self-Referenced CMOS Clock Generator with 90ppm Total Frequency Error and Spread-Spectrum Capability

Contact Info

Product

Resources

About