Electrooptical properties and structural features of amorphous ITO

Amosova, L. P.

doi:10.1134/s1063782615030045

Cited by 10 publications

(9 citation statements)

References 18 publications

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“…Features of ITO-films' deposition are described well in papers [6][7]. Main conclusion of these papers is that during ITO-films' deposition on the cold substrate the process of oxidation is nearly stopped on the substrate.…”

Section: Resultsmentioning

confidence: 90%

“…Dependence between partial pressure of the oxygen in the chamber and film growth rate needs optimal film growth rate which is in the range of 2 -3.5 Å/s [5][6][7]. Test samples were obtained by magnetron sputtering of metal target In/Sn in the gas mixture of Ar(50%)/O 2 (50%) with different values of the discharge current (0.…”

Section: Experiments I -"Measurement Of Ito-film Deposition Rate"mentioning

confidence: 99%

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Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Zhidik

Troyan

Baturina

et al. 2016

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

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Section: Resultsmentioning

confidence: 90%

Section: Experiments I -"Measurement Of Ito-film Deposition Rate"mentioning

confidence: 99%

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Zhidik

Troyan

Baturina

et al. 2016

IOP Conf. Ser.: Mater. Sci. Eng.

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“…In the present work we are investigating electro-optical properties of ITO electrodes deposited by magnetron sputtering. We used procedure 14,15 which provide good transmittance and conductivity of amorphous ITO film. We study the impact of thermal post-annealing on the value of ITO thin films optical band gap, refractive index and surface conductivity.…”

Section: Introductionmentioning

confidence: 99%

Transparent surface radio-frequency trap

Shcherbinin¹,

Rybin²,

Rudyi³

et al. 2023

SPIE Future Sensing Technologies 2023

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The study of charged particles in radio-frequency (RF) traps is associated with optical response registration. The common issue of optical collection efficiency is caused by the FR trap geometry, which restricts its coupling with optical equipment. To overcome this issue we propose a transparent surface RF traps with Indium Tin Oxide (ITO) thin-film electrodes. ITO sputtering techniques are well known and support deposition on any optical surface. The development of full transparent RF trap is associated with ITO refractive index and optical band gap optimisation while maintaining high electrical conductivity. Here we studied the ITO thin film properties depending on post-annealing temperature. We used the optimal procedure to develop transparent surface RF trap. We demonstrate a stable localization of charged microspheres in the electric field of the developed trap. The proposed approach allows full optical access to trapped charged particle.

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“…ITO is widely used as transparent conductive coatings in the production of liquid crystal displays, laptop monitors, electroluminescent lamps, electrodes of photoconductive cells, fuel cells (including high-temperature ones), etc. [9,10].…”

Section: Introductionmentioning

confidence: 99%

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

Mittova¹,

Kostryukov²,

Ilyasova³

et al. 2020

Nanosystems: Phys. Chem. Math.

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The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO 2 /InP heterostructures (thickness of SnO 2 layer ∼ 50 nm). It was established that SnO 2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO 2 provides the formation of nanoscale films with semiconductor properties.

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Electrooptical properties and structural features of amorphous ITO

Cited by 10 publications

References 18 publications

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Transparent surface radio-frequency trap

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

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