“…9 It was originally devised for integrated optics, 10 but it also opens up possibilities for domain engineering and ferroelectric lithography on LN substrates. 5,8,11,12 Conventional characterizations of PE in LN, made by optical techniques 13,14 are inherently limited in their spatial resolutions by beam cross-sections (in the micrometric range), while alternative methods, which can enable nanoscale imaging, are often cumbersome and destructive. 15,16 On the other hand, as LN technology is pushed to the nanoscale in 3D device engineering, 5,17 non-destructive and highresolution characterizations of the material properties become essential.…”