Electrostatic-discharge-induced degradation of 1.3μm AlGaInAs∕InP buried heterostructure laser diodes

Ichikawa, Hiroyuki; Matsukawa, Shingo; Hamada, K.; Ikoma, Nobuyuki; Nakabayashi, Takashi

doi:10.1063/1.3245389

Cited by 8 publications

(1 citation statement)

References 8 publications

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“…13) The lasing, modulation and other characteristics of AlGaInAs/InP BH lasers subjected to these methods have been reported. [7][8][9][10][11][12][13][14] However, quantitative studies of the regrowth interface quality of BH structures have not been reported.…”

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confidence: 99%

Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers

Takino

Shirao

Satō

et al. 2011

Jpn. J. Appl. Phys.

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The effect of in-situ thermal cleaning on the regrowth interface quality of 1.3 m AlGaInAs/InP buried-heterostructure lasers prepared by organometallic vapor-phase epitaxy (OMVPE) was investigated. It was proven that the regrowth interface quality can be quantitatively evaluated on the basis of the surface recombination velocity determined from the electroluminescence property below the threshold, and the tendency of the characteristics agreed with the lasing properties. As a result of a successful operation with the stripe width of 3.6 m, treated by the thermal cleaning process at a temperature of 450 C for 30-60 min in a PH 3 atmosphere, an internal quantum efficiency of approximately 70% was achieved. #

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confidence: 99%

Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers

Takino

Shirao

Satō

et al. 2011

Jpn. J. Appl. Phys.

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ESD sensitivity of AlGaAs and InGaAsP based Fabry–Perot laser diodes

Neitzert

2010

Microelectronics Reliability

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Dependence of facet stress on reliability of AlGaInAs edge-emitting lasers

Ichikawa

Kumagai

Kono

et al. 2010

Journal of Applied Physics

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The relationship between facet stress and reliability of AlGaInAs edge-emitting lasers is unclear despite it being an important issue. We prepared two 1.3 μm AlGaInAs Fabry–Pérot buried-heterostructure (BH) lasers that were identical except that they had tensile and compressive stress at the facet. The magnitude of the facet stress was controlled to be approximately 200 MPa in both lasers. We performed three reliability tests. In forward-biased electrostatic discharge tests, which can evaluate the resistance to optical damage, the cumulative degradation ratio of the compressive stressed laser was 33% lower than that of the tensile stressed laser. This result indicates a reduction in the optical absorption due to enlargement of the energy band gap at the facet. In the long-term aging of the light output power of 8 mW at 85 °C over 5 000 h, no dependence of the facet stress on the lifetime was observed. Since a major limitation of InP-based BH lasers is the BH interface, the aging results are reasonable. In the accelerated aging of a large current of 200 mA at 85 °C over 800 h, degradation (defined as an increase in the threshold current of over 10%) was observed only in the tensile stressed laser. This degradation differed completely from that caused by optical absorption; dislocation loops covered the entire active layer at the facet. To the best of our knowledge, this is the first time such degradation has been reported. We found the degradation depends on the facet stress and that compressive stress can suppress the degradation.

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Electrostatic-discharge-induced degradation of 1.3μm AlGaInAs∕InP buried heterostructure laser diodes

Abstract: High-peak-power pulsed operation of 2.0 μ m (AlGaIn)(AsSb) quantum-well ridge waveguide diode lasers

Cited by 8 publications

References 8 publications

Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers

Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers

ESD sensitivity of AlGaAs and InGaAsP based Fabry–Perot laser diodes

Dependence of facet stress on reliability of AlGaInAs edge-emitting lasers

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