Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers

Abstract

The effect of in-situ thermal cleaning on the regrowth interface quality of 1.3 m AlGaInAs/InP buried-heterostructure lasers prepared by organometallic vapor-phase epitaxy (OMVPE) was investigated. It was proven that the regrowth interface quality can be quantitatively evaluated on the basis of the surface recombination velocity determined from the electroluminescence property below the threshold, and the tendency of the characteristics agreed with the lasing properties. As a result of a successful operation with the stripe width of 3.6 m, treated by the thermal cleaning process at a temperature of 450 C for 30-60 min in a PH 3 atmosphere, an internal quantum efficiency of approximately 70% was achieved. #

Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C

“…Following in situ thermal cleaning under PH 3 atmosphere, for removing the oxidized surface, a n/p/n/p-InP thyristor structure was deposited for current blocking as well we optical confinement. [24][25][26][27] Please note the stripe width of W is defined as this metsa width (the width of QWs). Subsequently, a p-GaInAsP base layer (100 nm, E g = 1.03 eV) and a n-GaInAsP layer (40 nm, E g = 1.03 eV) were grown and etched at both sides of the stripe by SiO 2 mask.…”