Electrostatic Self-Assembled Composite Abrasives for Chemical Mechanical Polishing of A-Plane Sapphire

Yu, Haiyang; Xiao-xue, Tang; Kong, Xue; Li, Xing’ai; Li, Yanpei; Xi, Mengfei; Chang, Tongtong; Meng, Danni; Yang, Senlin; Guo, Wanying; Zhang, Yanfeng; Zhang, Zefang; Rao, P. Divakara

doi:10.1149/2162-8777/ac39a6

Cited by 7 publications

(7 citation statements)

References 36 publications

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“…However, Vovk et al believed that silica abrasives undergo a chemical reaction, as shown in Formulas ( 6)-( 8), in which a layer of Al 2 SiO 5 aluminum silicate at a thickness of 20.5 nm was formed on the surface of sapphire during the CMP process, which was then removed using silica abrasives [54]. Yu et al also demonstrated the formation of Al 2 SiO 5 [55]. All in all, regardless of the compound formed by silica sol and alumina, the recognized mechanism is that at the interface between the abrasive and the sapphire, the solid-solid reaction between the sapphire and the abrasive will occur, forming a soft layer, which is conducive to the removal of the sapphire.…”

Section: The Mechanism Of Sapphire Polishingmentioning

confidence: 99%

Nanomaterials and Equipment for Chemical–Mechanical Polishing of Single-Crystal Sapphire Wafers

Li,

Fu,

et al. 2023

Coatings

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Single-crystal sapphire (α-Al2O3) has been widely used in semiconductor, optics, communication, national defense, and other fields. Before application, an ultra-smooth surface which is scratch free and subsurface damage free is essential. Furthermore, the sapphire has unique qualities such as significant rigidity and chemical stability, which make it extremely arduous to process. Chemical mechanical polishing (CMP) is recognized as the final process to reduce the roughness and eliminate surface defects of a sapphire surface. In this review, the materials and equipment used for the chemical polishing of a sapphire wafer are summarized, and the surface nanoscale changes of sapphire wafer are reviewed from the angles of regulating polishing-process parameters, composition of polishing slurry including that which is nano-abrasive, a pH regulator, a complexing agent, and other additives, as well as hybrid CMP technologies. The outlook and future applications are also summarized.

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Section: The Mechanism Of Sapphire Polishingmentioning

confidence: 99%

Nanomaterials and Equipment for Chemical–Mechanical Polishing of Single-Crystal Sapphire Wafers

Li,

Fu,

et al. 2023

Coatings

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“…In addition, sapphire is chemically inert and hence does not react with acids at room temperature and is an excellent electrical insulator with high permittivity (Xu et al , 2018; Zhang et al , 2021). It is used in several fields such as the military, aerospace industry, biomedical industry and lighting-display field (Zhankui et al , 2021; Yu et al , 2021). The surface of sapphire wafers for light emitting diode ( LED) substrates should be ultra-smooth and damage-free (Uhlmann et al , 2018; Shi et al , 2018).…”

Section: Introductionmentioning

confidence: 99%

Surface quality prediction and lapping process optimisation on the fixed-abrasive lapping plate of sapphire wafers

Yan

Wang²,

Liu³

2022

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Purpose Lapping is a vital flattening process to improve the quality of processed semiconductor wafers such as single-crystal sapphire wafers. This study aims to optimise the lapping process of the fixed-abrasive lapping plate of sapphire wafers with good overall performance [i.e. high material removal rate (MRR), small surface roughness (Ra) of the wafers after lapping and small lapping plate wear ratio (η)]. Design/methodology/approach The influence of process parameters such as lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed on MRR, Ra and η of lapping-processed sapphire wafers was studied, and the results were combined with experimental data to establish a regression model. The multi-evaluation index optimisation problem was transformed into a single-index optimisation problem via an entropy method and the grey relational analysis (GRA) to comprehensively evaluate the performance of each parameter. Findings The results revealed that lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed had different influence degrees on MRR, Ra and η. Among these parameters, lapping time, lapping speed and abrasive size had the most significant effects on MRR, Ra and η, and the established regression equations predicted the response values of MRR, Ra and η to be 99.56%, 99.51% and 93.88% and the relative errors between the predicted and actual measured values were <12%, respectively. With increased lapping time, MRR, Ra and η gradually decreased. With increased abrasive size, MRR increased nearly linearly, whereas Ra and η initially decreased but subsequently increased. With an increase in abrasive concentration, MRR, Ra and η initially increased but subsequently decreased. With increased lapping pressure, MRR and η increased nearly linearly and continuously, whereas Ra decreased nearly linearly and continuously. With increased lapping speed, Ra initially decreased sharply but subsequently increased gradually, whereas η initially increased sharply but subsequently decreased gradually; however, the change in MRR was not significant. Comparing the optimised results obtained via the analysis of influence law, the parameters optimised via the entropy method and GRA were used to obtain sapphire wafers lapping with an MRR of 4.26 µm/min, Ra of 0.141 µm and η of 25.08, and the lapping effect was significantly improved. Originality/value Therefore, GRA can provide new ideas for ultra-precision processing and process optimisation of semiconductor materials such as sapphire wafers.

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“…As the best global planarization technology, chemical mechanical polishing (CMP) has been widely used in processing various substrate materials, optical crystals, and metals. [4][5][6][7][8][9][10][11][12][13] Through the synergy of chemical etching and mechanical abrasion, an ultra-smooth and defect-free surface can be achieved.…”

mentioning

confidence: 99%

Structure-Performance Relationships of Complexing Agents on the Chemical Mechanical Polishing of 6063 Aluminum Alloy

Xi²,

Jiang³

et al. 2023

ECS J. Solid State Sci. Technol.

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Aluminum alloy has wide applications in many industries due to its unique properties. Chemical mechanical polishing (CMP) is commonly used to treat aluminum alloy to generate mirror-finish surface. In this study, the effects of pH and H2O2 concentration on the CMP of 6063 aluminum alloy were studied. Better CMP performance was obtained in basic media with 1.0 wt% H2O2. Moreover, complexing agents with different structures and functional groups were evaluated for the CMP of Al-alloy, and their structure-performance relationship was systematically studied. It was found that complexing power, steric hindrance, and electrostatic repulsion of complexing agents were important factors determining material removal rate and surface roughness. The complexing agent with high complexing power can favor the dissolution and Al substrate. The complexing agent with large steric hindrance and high charge density can form a stable boundary layer on the surface of substrate and improve its dispersion ability, thereby improving MRR and surface quality. In addition, the amino functional groups of complexing agents exist in the form of neutral molecules at pH 10, which is inferior to carboxyl complexing agents due to their poor static repulsion. X-ray photoelectron spectroscopy analysis confirmed the anchoring of carboxylate anions on the sample surface.

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Electrostatic Self-Assembled Composite Abrasives for Chemical Mechanical Polishing of A-Plane Sapphire

Cited by 7 publications

References 36 publications

Nanomaterials and Equipment for Chemical–Mechanical Polishing of Single-Crystal Sapphire Wafers

Nanomaterials and Equipment for Chemical–Mechanical Polishing of Single-Crystal Sapphire Wafers

Surface quality prediction and lapping process optimisation on the fixed-abrasive lapping plate of sapphire wafers

Structure-Performance Relationships of Complexing Agents on the Chemical Mechanical Polishing of 6063 Aluminum Alloy

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