2019
DOI: 10.1002/pssa.201800797
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Electrostatically Driven Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

Abstract: This paper presents the design, fabrication, and evaluation of electrostatically driven nanoelectromechanical (NEM) switches and logical gates, including NAND and NOR gates. The conformal deposition of tungsten (W) on high aspect ratio structures is investigated by selective W chemical vapor deposition (CVD) as an electrical contact material. The switching characteristics of the NEM switches, as well as their pull-in voltages, are evaluated. Logical gates, including NAND and NOR gates, are formed by the four N… Show more

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