Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs—AC Versus Circuit-Speed Random Stress

Chen, Wenchao; Cheng, Ran; Wang, Dawei; Song, Hao; Wang, Xiang; Chen, Hongsheng; Li, Er‐Ping; Wang, Yin; Zhao, Yi

doi:10.1109/ted.2016.2591767

Cited by 27 publications

(23 citation statements)

References 29 publications

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“…The drift‐diffusion equations can be used to describe particles or carrier transport in various kinds of large‐scale electronic devices . However, the drift‐diffusion equations cannot be directly discretized because of certain convergence problem.…”

Section: Modeling and Simulation Approachmentioning

confidence: 99%

“…However, the drift‐diffusion equations cannot be directly discretized because of certain convergence problem. Therefore, Schffetter‐Gummel discretization is usually used to overcome this problem . Taking electron transport for example as below.…”

Section: Modeling and Simulation Approachmentioning

confidence: 99%

“…The drift-diffusion equations can be used to describe particles or carrier transport in various kinds of large-scale electronic devices. [46][47][48][49][50][51][52] However, the drift-diffusion equations cannot be directly discretized because of certain convergence problem. Therefore, Schffetter-Gummel discretization is usually used to overcome this problem.…”

Section: Carrier Transport Equationsmentioning

confidence: 99%

“…Therefore, Schffetter-Gummel discretization is usually used to overcome this problem. [46][47][48][49][50][51][52] Taking electron transport for example as below. Carrier transport in the c-Si thin film can be described by…”

Section: Carrier Transport Equationsmentioning

confidence: 99%

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Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Xie

Wang

Yang

et al. 2018

Int J Numerical Modelling

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Modeling and simulation approaches are developed to investigate our proposed graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell. Algorithm based on finite difference method is developed to solve the Poisson equation, drift‐diffusion equations, and current continuity equations. Charge transfer effect in the proposed solar cell is not significant due to light doping in the Si thin film. The open‐circuit voltage and short‐circuit current can be tuned by gate bias. As the magnitude of negative bias increases, both the open‐circuit voltage and short‐circuit current increase due to the increase of Schottky barrier height and depletion width. Thin oxide thickness leads to high modulation efficiency. Optimization of the solar cell is achieved by introducing back field layer to increase carrier collection efficiency.

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Section: Modeling and Simulation Approachmentioning

confidence: 99%

Section: Modeling and Simulation Approachmentioning

confidence: 99%

Section: Carrier Transport Equationsmentioning

confidence: 99%

Section: Carrier Transport Equationsmentioning

confidence: 99%

See 2 more Smart Citations

Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Xie

Wang

Yang

et al. 2018

Int J Numerical Modelling

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“…As well, they proposed that the short-channel effect of SOI MOSFETs can be improved by applying a reverse bias to the substrate to push the inversion channel from the back surface to the front. Further, Chen et al [18] have studied the electrothermal effects on hot-carrier injection (HCI) in 100-nm silicon-on-insulator (SOI) MOSFET for a digital integrated circuit. They proved that the buried oxide layer leads to a high temperature in the channel and deteriorates the HCI.…”

Section: ) Introductionmentioning

confidence: 99%

Optimization of Heat Transfer Process in Double Gate MOSFET Using Modified BDE Model

Ghedira

Nasri

Mera

2021

Preprint

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In this paper, a nonlinear electrical model is derived and is used to calculate the electric field and the current density. To corroborate our electrical model, it was compared to TCAD simulator. It was shown that the proposed model captures the current density with a good degree of agreement with TCAD simulator. The electrical model is given by the modified Drift-Diffusion (D-D) model coupled with the Ballistic-Diffusive Equation (BDE) which is able to predict the heat transfer phenomenon in the nanoscale regime. The thermal device performance is then investigated by varying device parameters including gate and drain biases with implementation of different gate dielectric to explore its response on thermal characteristics. It was further shown that the proposed electro-thermal model is able to predict the nano heat conduction in (DG) nanostructure devices. In addition, it is shown that the heat flux process could be controlled by adjusting the drain and gate voltages.

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Optimization of the heat conduction process in a double-gate MOSFET using an enhanced electrothermal model

et al. 2022

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Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs—AC Versus Circuit-Speed Random Stress

Cited by 27 publications

References 29 publications

Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Computational study of graphene‐gated graphene‐Si thin film Schottky junction field‐effect solar cell by finite difference method

Optimization of Heat Transfer Process in Double Gate MOSFET Using Modified BDE Model

Optimization of the heat conduction process in a double-gate MOSFET using an enhanced electrothermal model

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