Electrothermal Model of SiC Power BJT

Abstract

This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

Methods of Fast Analysis of DC–DC Converters—A Review

“…In many papers, such models dedicated to the SPICE programme were presented. For example, the model of the SiC MOSFET power module is given in [65], a thermal model of electronics components is proposed in [79], a model of power MOSFET is described in [81], and a model of SiC power BJT is described in [82]. From the point of view of applications in the analysis of pulse systems, important are hybrid electrothermal models described, among others, in [83].…”

“…It results from the fact that thermal resistance of a semiconductor component is not constant, as it is assumed in linear thermal models based on the Foster and Cauer networks [84]. In the models described in [81,82], the value of thermal resistance depends on the power emitted in it, and in [67,85]-on the junction temperature of the semiconductor device and the ambient temperature.…”

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

“…3 illustrates the BJT small signal model. The internal parameters within the dotted line are considered the intrinsic parameters of the transistor, while the external parameters outside the dotted line are categorized as the transistor's parasitic parameters [22][23][24][25][26]. Given that HBTs employ BJT as their base model and integrate various materials as heterostructures to enhance current [1,21,24], the small signal model of the BJT can serve as a fundamental basis for parameter prediction and extraction in the modeling process.…”

“…Following the model structure described in reference [28], two HBTs are directly cascaded and then linked to the corresponding resistance according to the connection method. The selection of parameters initially refers to the magnitude order of the parameters extracted in [7,23,30], which are subsequently fine-tuned based on the simulation results.…”

“…Gain curve of DUTFig.3illustrates the BJT small signal model. The internal parameters within the dotted line are considered the intrinsic parameters of the transistor, while the external parameters outside the dotted line are categorized as the transistor's parasitic parameters[22][23][24][25][26]. Given that…”