This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

In the paper, the results of experimental verification of the macromodel of UJN1208K JFET transistor made of silicon carbide fabricated by United Silicon Carbide, are presented. The macromodel form dedicated for PSPICE program is available on the manufacturer's website. The accuracy of the macromodel have been evaluated by comparison of selected calculated and measured static characteristics and C-V characteristics of the considered transistor. The influence of ambient temperature on the characteristics of the transistor has been evaluated, as well.

SUMMARYIn the paper the problem of modelling DC characteristics of SiC MESFETs is presented. Some modifications of the popular Raytheon-Statz model built-in in SPICE are proposed. The original and the modified models are verified experimentally by comparison of the measured and simulated device characteristics. One of the two available today on the market SiC MESFETs-the transistor CRF24010 offered by Cree, Inc. is chosen for investigations.

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This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.