Modifications of the DC Raytheon–Statz model for SiC MESFETs

Zarębski, J.; Bisewski, D.

doi:10.1002/jnm.696

Cited by 2 publications

(6 citation statements)

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“…Controlled current source G Z describes the drain current in the breakdown range. An efficiency of the source G Z is of the form

i_{Z} = I_{BR} \cdot exp [\frac{((), U_{BR} + γ_{BR} \cdot V_{GS 0}) \cdot ((), 1 - α_{BR} \cdot ((), T_{j} - T_{0})) + V_{DS 0}}{N_{BR} \cdot ((), 1 - α_{NBR} \cdot ((), T_{j} - T_{0})) \cdot h \cdot T_{j}}]

where U BR is the breakdown voltage, α BR is the breakdown voltage temperature coefficient, γ BR is the model parameter describing an influence of the gate‐source voltage on the breakdown voltage, I BR is the breakdown current parameter, and N BR and h are the model parameters.…”

Section: The Model Formmentioning

confidence: 99%

“…Sources G RD , G RG , and G RS represent the parasitic resistances of the drain, the gate, and the source regions, respectively. For example, an efficiency of the source G RD is given by the formula

i_{D 1} = \frac{V_{normalD 1}}{R_{D 0} \cdot [1 - α_{RD} \cdot (T_{normalj} - T_{0})]}

where R D0 is the drain resistance at the reference temperature, α RD is the drain resistance temperature coefficient, and V D1 is the internal voltage indicated in Figure (a). An analogous description is applied to the other parasitic resistances of MESFET.…”

Section: The Model Formmentioning

confidence: 99%

“…Controlled current sources G D1 and G D2 describe currents of the gate‐to‐source and the gate‐to‐drain Schottky junctions, respectively. For instance, efficiency of the source G D2 is of the form :

i_{GS} = S_{normalS} \cdot A_{normalR} \cdot T_{normalj}^{m_{S}} \cdot exp (\frac{- B_{S 0}}{T_{normalj}}) \cdot F_{1} \cdot F_{2}

F_{1} = exp (\frac{V_{GS 0}}{h \cdot N_{S} \cdot T_{j}}) - 1

F_{2} = exp (\frac{L_{normalS 0} \cdot \sqrt[4]{V_{GS 0}^{C_{S}}}}{T_{normalj}})

where S S is the area of the junction, A R is the Richardson's constant, B S0 is the barrier height between the metal and n ‐type semiconductor, N S is the ideality factor, and L S0 and C S are the model parameters related to the Schottky barrier height lowering phenomenon .…”

Section: The Model Formmentioning

confidence: 99%

“…Controlled current source G Z describes the drain current in the breakdown range. An efficiency of the source G Z is of the form [3,12]…”

Section: The Model Formmentioning

confidence: 99%

Section: The Model Formmentioning

confidence: 99%

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Modeling of MESFET in SPICE including self-heating

Bisewski

Zarębski

2014

Int. J. Numer. Model.

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The paper deals with the problem of modeling and analysis in Simulation Program with Integrated Circuit Emphasis of thermal effects influence on properties of metal–semiconductor field‐effect transistor made of different semiconductor materials, that is, gallium arsenide and silicon carbide. An electrothermal model of the investigated transistors was formulated and experimentally verified. The proper procedure of parameter estimation for the elaborated model was carried out. The evaluation of accuracy and examination of usefulness of the elaborated model have been performed by comparison of measured and calculated devices characteristics. Copyright © 2014 John Wiley & Sons, Ltd.

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“…Controlled current source G Z describes the drain current in the breakdown range. An efficiency of the source G Z is of the form