DC characteristics and parameters of silicon carbide high-voltage power BJTs

Electrothermal Model of SiC Power BJT

“…In addition, the dependence of the current gain factor β(T) at a fixed value of a collector current is a decreasing function. This is a characteristic feature of bipolar power transistors made with silicon carbide technology [8,[25][26][27]. The results of simulations using the proposed β model has a good agreement with the results of the measurements β(iC) characteristics in all ranges of temperature, which indicates that the transistorʹs current gain properties deteriorate with the temperature increase.…”

“…The negative slope of the collector current with increasing collector-emitter voltage is caused by the strong self-heating phenomenon. In the literature, this type of characteristic is called an N-shape characteristic [8].…”

“…Figure 6 shows the authors' measured and calculated values β factor for the considered transistor in the isothermal conditions at a fixed value of the collector-emitter voltage equal to 3 V. self-heating phenomenon. In the literature, this type of characteristic is called an N-shape characteristic [8].…”

“…The ambient temperature has a strong impact on certain characteristics and parameters of the silicon carbide power bipolar transistors [4,[6][7][8]. Moreover, in real operating conditions, due to the self-heating phenomenon, the junction temperature exceeds the ambient temperature because of the device dissipated thermal power converted into the heat in non-ideal heat dissipation conditions.…”

Evaluation of accuracy of SiC-JFET macromodel

“…This development trend also applies SiC-JFETs (Silicon Carbide Junction Field-Effect Transistors) often used in e.g. power electronics systems for generation and conversion of electrical energy [1][2][3][4].…”