Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Bisewski, D.; Myśliwiec, Marcin; Górecki, Krzysztof; Kisiel, Ryszard; Zarębski, J.

doi:10.1515/mms-2016-0033

Cited by 10 publications

(11 citation statements)

References 13 publications

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“…It is worth to noticing that for each considered diode different values of forward voltage and series resistance are obtained. Comparing the characteristics obtained for both the values of temperature one can easily notice that influence of temperature on courses of these characteristics is weaker than for the classical silicon p -n diodes (Wilamowski and Jaeger, 1997) or SiC Schottky diodes (Bisewski et al , 2016; Górecki et al , 2019).…”

Section: Results Of Measurements and Computationsmentioning

confidence: 89%

“…According to this idea, thermal resistance is measured in three stages including: calibration of a thermometric characteristic, dissipation of power of the fixed value in the investigated diode (DUT) and measurements of internal temperature of the investigated diode consisting in measuring voltage v H on the forward biased diode at measuring current I M . Using the measured values of voltage on the diode at the thermally steady state at heating current I H , the value of voltage v H and a thermometric characteristic measured during calibration, the value of thermal resistance is computed with the use of the definition given among others in the papers (Blackburn, 2004; Bisewski et al , 2016; Avenas et al , 2012).…”

Section: Estimation Of Model Parameters Valuesmentioning

confidence: 99%

“…Unfortunately, at present this is only a theoretical possibility, because so far no one has introduced to industrial production any high-temperature cases dedicated to the considered class of devices. Yet, this would make possible operation of these devices at very high values of their internal temperature (Kisiel and Myśliwiec, 2017; Yildirim et al , 2010; Abay et al , 2003; Cinar et al , 2009; Sheng, 2009; Buttay et al , 2011; Górecki et al , 2019; Bisewski et al , 2016; Górecki et al , 2019a). Investigations devoted to construct such cases were described among others in the papers (Górecki et al , 2019; Górecki et al , 2019a; Bisewski et al , 2016).…”

Section: Introductionmentioning

confidence: 99%

“…As it is commonly known, technological processes applied in production of semiconductor devices demand the use of high values of temperature and pressure (Kisiel and Myśliwiec, 2017; Górecki et al , 2019; Górecki et al , 2019a; Bisewski et al , 2016). As it is shown in Górecki et al (2019) and Górecki et al (2019a), these processes can cause changes in the course of characteristics of such devices.…”

Section: Introductionmentioning

confidence: 99%

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Compact electrothermal model of laboratory made GaN Schottky diodes

Górecki

2020

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Purpose The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved. Design/methodology/approach The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described. Findings It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed. Research limitations/implications The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes. Originality/value The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

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Section: Results Of Measurements and Computationsmentioning

confidence: 89%

Section: Estimation Of Model Parameters Valuesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Compact electrothermal model of laboratory made GaN Schottky diodes

Górecki

2020

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“…In a previous paper (Górecki et al, 2016), the authors prove that these packages make it possible to increase the maximum internal temperature of the diode even to 500°C. In an earlier paper (Górecki et al, 2016;Bisewski et al, 2016), the authors considered thermal properties of the selected constructions of packages of these devices, making their operation possible within the range of high temperatures of the semiconductor chip.…”

Section: Introductionmentioning

confidence: 99%

Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Górecki

Bisewski

Zarębski

et al. 2017

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Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

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The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Damcevska,

Dimitrijev,

Haasmann

et al. 2023

Sci Rep

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Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles. The reliable operation of these systems requires the chip temperature of SiC Schottky diodes to be maintained within the limit set by the device package. This is especially crucial during surge-current events that dissipate heat within the device. As a thermal-management method, manufactures of commercial SiC Schottky diodes have introduced wafer thinning practices to reduce the thickness of the SiC chip and, consequently, to reduce its thermal resistance. However, this also leads to a reduction in the thermal capacitance. In this paper, we present experimental data and theoretical analysis to demonstrate that the reduced thermal capacitance has a much larger adverse effect in comparison to the beneficial reduction of the thermal resistance. An implication of the presented results is that, contrary to the adopted wafer thinning practices, SiC Schottky diodes fabricated without wafer thinning have superior surge-current capability.

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Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Cited by 10 publications

References 13 publications

Compact electrothermal model of laboratory made GaN Schottky diodes

Compact electrothermal model of laboratory made GaN Schottky diodes

Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

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