2018
DOI: 10.1016/j.orgel.2018.04.017
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Eliminating J-V hysteresis in perovskite solar cells via defect controlling

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Cited by 33 publications
(21 citation statements)
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“…[138,144] Some other additives, including ammonium-based salts, have also been utilized to control the hysteresis in some cases. [145][146][147] In brief, Si and co-workers have fabricated a homogenous and flawless perovskite film with relatively large crystal sizes by adding 2% NH 4 I into the MAPbI 3 solution during the one-step process, and consequently, a negligible hysteresis is achieved. [131] The intermediate phase NH 4 PbI 3 forms upon the addition of NH 4 I, which provides additional heterogeneous nucleation sites and reduces the defects due to the absence of MA + at the initial stage.…”
Section: Improving the Morphology Of The Perovskite Layer By Different Fabrication Methodsmentioning
confidence: 99%
“…[138,144] Some other additives, including ammonium-based salts, have also been utilized to control the hysteresis in some cases. [145][146][147] In brief, Si and co-workers have fabricated a homogenous and flawless perovskite film with relatively large crystal sizes by adding 2% NH 4 I into the MAPbI 3 solution during the one-step process, and consequently, a negligible hysteresis is achieved. [131] The intermediate phase NH 4 PbI 3 forms upon the addition of NH 4 I, which provides additional heterogeneous nucleation sites and reduces the defects due to the absence of MA + at the initial stage.…”
Section: Improving the Morphology Of The Perovskite Layer By Different Fabrication Methodsmentioning
confidence: 99%
“…However, interface barriers usually exist between the metal cathode (such as Ag, Al) and the electron transport layer (such as PCBM) in planar p-i-n PVSCs, leading to poor electron extraction [30,31]. Interface engineering should come to the rescue to eliminate any possible interfacial structural and electronic mismatches, to lower interfacial energy barriers, and thus to reduce interfacial trap density [32][33][34][35]. In addition to the aforementioned possible efficiency gain, interface engineering is also expected to improve the chemical stability of the perovskite absorber [36,37], thereby enhancing the overall device stability.…”
Section: Introductionmentioning
confidence: 99%
“…50,51 In addition, the TPC decay time for the CEA-based PePV was shorter than the pristine devices; as shown in Figure 4d, devices with CEA and without CEA showed 0.45 and 1.35 μs TPC decay time, respectively, thus confirming that a more effective charge transport is possible in the CEA-based PePV. 18,44 More notably, these comprehensive observations shown in Figure 4 support that the CEA-induced, better device performances could be caused by the improved charge transport behavior and suppressed trap-assisted recombination to be achieved with the CEAinduced perovskite-film changes.…”
Section: ■ Experimental Sectionmentioning
confidence: 56%