Elimination of local thickness modulation in GaAs/GaAsP strained superlattices for high spin-polarization photocathodes

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation

“…In this research, thickness modulation of the GaAs/GaAsP strained superlattice was induced on a vicinal GaAsP buffer layer [5] and the spin-polarization of the GaAs/GaAsP strained superlattice decreased to 60%. Reducing the roughness of the GaAsP buffer layer contributed to the formation of a uniform and periodic GaAs/GaAsP strained superlattice layer and the spin-polarization is up to 90% with super-high brightness as mentioned above [6].…”

Fourfold Increase in Quantum Efficiency in Highly Spin-Polarized Transmission-Type Photocathode

“…The GaAs inter-layer was necessary to obtain the periodic GaAs/GaAsP superlattice. 5,6) These two factors lower the QE to 0.1%.…”