Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate

Jin, Xiuguang; Fuchi, Shingo; Takeda, Yoshikazu

doi:10.1016/j.jcrysgro.2012.09.008

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…Recently, it has been reported that compressive strain relaxation by the formation of an island structure in the early growth stage can effectively increase the flatness of the surface. 10) According to this strain relaxation model, the y value for a flat GaAs ð1ÀyÞ P y surface is in the range of 0-0.25. On the basis of results from the valence band splitting and strain relaxation models, the available y value is in the range 0.19-0.25.…”

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confidence: 99%

High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

Jin

Mano

Ichihashi

et al. 2013

Appl. Phys. Express

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We have successfully developed a transmission-type GaAs/GaAsP strained superlattice (SL) photocathode, and a high spin-polarization (SP) (90%) with a super-high brightness (~10 7 A⋅cm −2 ⋅sr −1 ) of electron beam was achieved [1]. In this study, we report the design and fabrication of an optimized transmission-type photocathode with strain-compensated SL for higher quantum efficiency (QE).In the GaAs/GaAsP strained SL, a compressive strain was introduced in the GaAs well layers to obtain a large band-splitting between heavy-hole and light-hole mini-bands. The increasing SL pair-number causes strain relaxation with resultant SP degradation. A smaller SL layer thickness is one reason behind the limited value of the QE. To overcome this problem by increasing the SL layer thickness without degradation, the use of strain-compensated SL was proposed [2]. In this structure, a strain is introduced in the SL barrier layers to the opposite direction to compensate the strain in the SL well layers. Figure 1 shows the GaAs/GaAsP strain-compensated SL structure. The maximum pair of the prepared SL is 90.X-ray diffraction revealed that the strain relaxation by thickness increase was effectively controlled. Figure 2 shows the change of maximal spin-polarization with the SL pair number. The superlattice photocathodes up to 36-pair maintain high SP of about 90%. Then, the SP obviously decreased. During the transport, the spin-polarized electrons should flip by scattering with holes. The scattering effect becomes stronger in the thicker SL photocathodes. The thickness effect on the QE and transport time will be investigated.

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confidence: 99%

High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

Jin

Mano

Ichihashi

et al. 2013

Appl. Phys. Express

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“…GaP-based GaAs 1−y P y alloys have found applications in optoelectronic devices for a long time, and as a result the physical properties of these alloys such as atomic structure, energy band structure, and effective mass have been studied in great detail. However, the lack of suitable substrate leading to GaAs 1−y P y alloys to be grown on GaP substrates causes problems such as lattice mismatch [1], matching refractive index, and poor band structure configuration [2], which yield decreased layer thickness, poor carrier and optical confinement, and reduced electron effective mass [3]. With the incorporation of nitrogen (N) into GaAs 1−y P y alloy, these physical properties have been changed significantly and these major challenges are overcome [4].…”

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confidence: 99%

Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Ünsal¹,

Gönül²

2017

Turk J Phys

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Abstract:A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN x As 1−x−y P y with that of GaAs 1−y P y on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs 1−y P y /GaP is greater than that of GaN x As 1−x−y P y /GaP for all concentrations.We have demonstrated that one can improve the optical confinement factor of GaN x As 1−x−y P y /GaP by using an Al z Ga 1−z P cladding layer.

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Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic GaAs1−x P x Ternary Alloys Under Hydrostatic Pressure

Moussa

Abdiche

Abbar

et al. 2015

Journal of Elec Materi

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Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate

Cited by 3 publications

References 12 publications

High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Ab Initio Investigation of the Structural, Electronic and Optical Properties of Cubic GaAs1−x P x Ternary Alloys Under Hydrostatic Pressure

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