Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

Fujikura, Hajime; Hayashi, Kentaro; Horikiri, Fumimasa; Konno, Taichiro; Yoshida, Takehiro; Ohta, Hiroshi; Mishima, Tomoyoshi

doi:10.7567/apex.11.045502

Cited by 28 publications

(12 citation statements)

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“…[2] Its control is crucial for layers with low doping levels and nonuniform incorporation of carbon can reduce the breakdown voltage of electronic devices dramatically. [3][4][5][6] Carbon is suspicious to be related to current collapse and dispersion in transistors when used intentionally in highly resistive buffer layers. [7,8] Thus, the electronic properties of carbon in GaN remain of high interest.…”

Section: Introductionmentioning

confidence: 99%

“…Carbon is incorporated as an impurity due to the metalorganic sources in metalorganic vapor phase epitaxy (MOVPE) which is often employed for the growth of device layer structures . Its control is crucial for layers with low doping levels and nonuniform incorporation of carbon can reduce the breakdown voltage of electronic devices dramatically . Carbon is suspicious to be related to current collapse and dispersion in transistors when used intentionally in highly resistive buffer layers .…”

Section: Introductionmentioning

confidence: 99%

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Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 10 10 cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, C N -a-C Ga -a-C N and C N -a-C Ga -c-C N , are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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“…By the rapid development of epitaxy growth technology, highquality bulk GaN materials by HVPE become gradually possible [40,41]. Aside from the substrate, the partially epitaxial layer in device can now be grown by HVPE and can result in higher current uniformity and the elimination of the macrostep on the GaN surface by combining HVPE and the MOCVD epitaxial process with carbon-free technology compared devices grown solely by MOCVD [42].…”

Section: Gan Substrate Of Vertical Pndsmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

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“…They have shown the complex nature of the problem. [15][16][17][18][19][20] For instance, some studies pointed out the detrimental role of carbon in the generation of defects related to leakage paths, [18,19] while others mentioned particular dislocations as responsible for electrical leakage. [20] Elucidating the relationship between electrical activity and structure defects is essential to developing GaN substrates for applications such as light-emitting diodes (LEDs) and laser diodes (LDs) for lighting, p-n or Schottky high voltage rectifying diodes and power switching transistors.…”

Section: Introductionmentioning

confidence: 99%