Ellipsometric analysis of mixed metal oxides thin films

Buiu, O.; Davey, W.; Lu, Yi; Mitrović, Ivona Z.; Hall, Steve

doi:10.1016/j.tsf.2008.08.119

Cited by 26 publications

(18 citation statements)

References 11 publications

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“…The Cauchy model is a polynomial function 33 which is widely used for dielectrics and semiconductors in spectral regions where they are transparent. 28,30,[33][34][35] It is well known 28 that Cauchy model is an approximate function of Sellmeier model which, in turn, corresponds to a region where e 2 $ 0 in the Lorentz model. The equations for the Cauchy model 36 are…”

Section: Spectroscopic Ellipsometric Measurements Of Hfo 2 Thin mentioning

confidence: 99%

“…The use of Cauchy model to study HfO 2 films has also been reported in the literature. 30,37 The optical constants of the crystalline silicon (Si) substrate and the silicon dioxide (SiO 2 ), i.e., n ¼ 1.46 for stoichiometric SiO 2 were obtained from the literature. 38,39 The parameters, such as thickness and optical constants (n and k) of HfO 2 thin film, were left as variables.…”

Section: Data Analysis Of Spectroscopic Ellipsometrymentioning

confidence: 99%

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In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Cantaş

Aygün

Basa

2014

Journal of Applied Physics

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We have investigated the reduction of unwanted interfacial SiO 2 layer at HfO 2 /Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO 2 thin films for possible direct contact between HfO 2 thin film and Si substrate, necessary for the future generation devices based on high-j HfO 2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO 2 thin films and also to undertake the in-situ characterization of the high-j HfO 2 thin films deposited on n-type h100i crystalline silicon substrate. The formation of the unwanted interfacial SiO 2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO 2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-j HfO 2 thin films are crystalline although they were deposited at room temperature. V C 2014 AIP Publishing LLC.

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Section: Spectroscopic Ellipsometric Measurements Of Hfo 2 Thin mentioning

confidence: 99%

Section: Data Analysis Of Spectroscopic Ellipsometrymentioning

confidence: 99%

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Cantaş

Aygün

Basa

2014

Journal of Applied Physics

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“…It is known that spectroscopic ellipsometry is a fast, sensitive and non-destructive method for thin film characterization. It requires no special environment and can be easily integrated into semiconductor processing [20,21].…”

Section: Spectroscopic Ellipsometry Analysismentioning

confidence: 99%

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Khomenkova¹,

Portier

Cardin

et al. 2010

Nanotechnology

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The microstructure and optical properties of HfSiO films fabricated by RF magnetron sputtering were studied by means of x-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry and attenuated total reflection infrared spectroscopy versus annealing treatment. It was shown that silicon incorporation in the HfO(2) matrix plays an important role in the structure stability of the layers. Thus, the increase of the annealing temperature up to 1000 degrees C did not lead to the crystallization of the films. The evolution of the chemical composition as well as a decrease of the density of the films was attributed to the phase separation of HfSiO on HfO(2) and SiO(2) phases in the film. An annealing at 1000-1100 degrees C results in the formation of the multilayer Si-rich/Hf-rich structure and was explained by a surface-directed spinodal decomposition. The formation of the stable tetragonal structure of HfO(2) phase was shown upon annealing treatment at 1100 degrees C.

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“…Spectroscopic ellipsometry does not require special environment and can be easily integrated into a semiconductor processing [29,30] as a fast, sensitive and non-destructive method for film characterization. The fitting of the experimental data is usually based on the effective medium approximation (EMA) [29,31].…”

Section: Spectroscopic Ellipsometry Analysismentioning

confidence: 99%

Hafnium silicate dielectrics fabricated by RF magnetron sputtering

Khomenkova

Portier

Marie

et al. 2011

Journal of Non-Crystalline Solids

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Structural and composition properties of hafnium silicate layers fabricated by RF magnetron sputtering were studied by means of spectroscopic ellipsometry, X-ray diffraction, transmission electron microscopy and attenuated total reflection infrared spectroscopy with respect to the deposition parameters and postdeposition annealing treatment. The variation of the deposition conditions allows the temperature of amorphous-crystalline phase transformation of pure hafnium oxide layers to be controlled. It is shown that the silicon incorporation in oxide matrix prevents the formation of interfacial silicon oxide layer and plays a major role in the stability of the structure of hafnium based layers remaining an amorphous state upon annealing at 900-950°C.

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Ellipsometric analysis of mixed metal oxides thin films

Cited by 26 publications

References 11 publications

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering

Hafnium silicate dielectrics fabricated by RF magnetron sputtering

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Ellipsometric analysis of mixed metal oxides thin films

Cited by 26 publications

References 11 publications

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Thermal stability of high-kSi-rich HfO2layers grown by RF magnetron sputtering

Hafnium silicate dielectrics fabricated by RF magnetron sputtering

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Thermal stability of high-kSi-rich HfO₂layers grown by RF magnetron sputtering