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Articles you may be interested inEffects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films J. Vac. Sci. Technol. A 33, 021520 (2015); 10.1116/1.4908157The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thicknessThe authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide ͑Gd 2 O 3 ͒ and silicon oxide ͑SiO 2 ͒ on silicon substrates are compared after annealing at temperatures up to 1000°C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO 2 layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.

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