Ellipsometric investigation of ion-implanted GaAs

Kim, Q.; Park, Y.S.

doi:10.1016/0039-6028(80)90309-x

Cited by 12 publications

(2 citation statements)

References 7 publications

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“…Considering the expected small change in index of refraction for the irradiated layer, 12,13 we expect a great reduction in unwanted reflections along the resonant cavity with isolated sections. Finally, with relatively low He ϩ -irradiation doses it is possible to create electrically isolated transparent windows in the optical cavity of a laser structure without any damage to the active region.…”

Section: Electrical Isolation and Transparency In Ion-irradiated P-inmentioning

confidence: 99%

Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures

Данилов

Pataro

Castro

et al. 2000

Journal of Applied Physics

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He + -ion irradiation was applied for electrical isolation of p-In0.49Ga0.51P in InGaP/GaAs/InGaAs structures. Sheet resistance of approximately 1×106 Ω/□ was achieved with doses above 1×1013 cm−2 at 100 keV. Thermal stability of isolation was maintained for annealing temperatures up to 500 °C. Photoluminescence results show that InGaP transparency to InGaAs/GaAs quantum-well emission is closely related to sheet resistance changes in the irradiated structure.

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Section: Electrical Isolation and Transparency In Ion-irradiated P-inmentioning

confidence: 99%

Electrical isolation and transparency in ion-irradiated p-InGaP/GaAs/InGaAs structures

Данилов

Pataro

Castro

et al. 2000

Journal of Applied Physics

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“…in the manufacture of semiconductor devices[ 1 J, however, a drawback of these techniques is the damage produced by the impinging energetic ions. Several techniques have been tried in the past to determine the damage profile, but most techniques are either not sensitive enough to measure low-level damaget2-41, require specially designed sample structures [5] or produce profiles that are model dependent [6,7]. We have used a sensitive optical technique to measure the damage profiles in semiconductors in a wide range of damage amplitude and distribution [8,9].…”

mentioning

confidence: 99%

Measurement of the damage profile of ion-implanted GaAs using an optical method

Gal

Wengler²,

Ilyas³

et al.

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)

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We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs.The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95). A. IntroductionIon-assisted processes, such as ion-implantation and plasma etching play an important pa^? in the manufacture of semiconductor devices[ 1 J, however, a drawback of these techniques is the damage produced by the impinging energetic ions. Several techniques have been tried in the past to determine the damage profile, but most techniques are either not sensitive enough to measure low-level damaget2-41, require specially designed sample structures [5] or produce profiles that are model dependent [6,7]. We have used a sensitive optical technique to measure the damage profiles in semiconductors in a wide range of damage amplitude and distribution [8,9]. The technique is based on differential reflectance (DR), a form of optical modulation spectroscopy[ 101 which, in combination with the periodic chemical etching of the sample, can reveal the actual damage profile. The drawback of the DR technique, however, is its speed periodic chemical etching followed by detailed optical measurement is time-consuming and laborious. To overcome this hutation, we have modified the process to reduce the time and effort needed to obtain the damage profile. The aim of this publication is to describe an automated profiling technique which is significantly faster and simpler than our previously demonstrated measurement process.

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