Ellipsometric monitoring of an oriented diamond nucleation process in bias-enhanced chemical vapor deposition

Abstract

Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping J. Appl. Phys. 105, 034311 (2009); 10.1063/1.3068366 Measurement of ion energy distributions in the bias enhanced nucleation of chemical vapor deposited diamondBias-enhanced nucleation of diamond on molybdenum: A photoelectron spectroscopy study of the initial stages of the growth process

High—temperature Sensors Based on SiC and Diamond Technology

“…Hayashi et al [57] have investigated the bias enhanced nucleation process using in situ ellipsometry. They observed four distinct stages, carbonization, incubation, nucleation, and growth.…”

Growth of well-aligned carbon nanotubes on nickel by hot-filament-assisted dc plasma chemical vapor deposition in a CH4/H2 plasma

“…One is the large area growth of carbon nanotubes and another is the analysis and control of the first and growth stages. By use of a hot-filament-assisted dc plasma ͑HF/DC-P͒ CVD system, which was used for the growth of diamond and the ellipsometric monitoring, 7,8 we also have succeeded in growing aligned carbon nanotubes perpendicular to nickel ͑Ni͒ substrates. In this article, the results of large-area growth of well-aligned carbon nanotubes in the gas of CH 4 /H 2 are described and the mechanism of the well-aligned growth is discussed.…”

Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

“…[http://dx.doi.org/10.1063/1.4861860] Spectroscopic ellipsometry has been introduced quite early on as an efficient way of characterizing the nucleation and subsequent coalescence and growth of polycrystalline diamond on silicon substrates induced by chemical vapor deposition (CVD), either in situ [1][2][3][4][5][6][7] or ex situ. [8][9][10][11][12][13] The main ingredients of this approach were the optical transparency of diamond in the visible range and the sizable difference between the refractive index of diamond (around 2.4) and that of the silicon substrate (around 3.5) over this spectral range.…”