Ellipsometric scatterometry for the metrology of sub-01-μm-linewidth structures

Minhas, Babar K.; Coulombe, Stephen A.; Naqvi, S. Sohail H.; McNeil, J. R.

doi:10.1364/ao.37.005112

Cited by 61 publications

(31 citation statements)

References 4 publications

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“…Some of the most widely used configurations are single incidence angle reflectometry, 2-Θ scatterometry, spectroscopic ellipsometry, Fourier scatterometry, interferometric Fourier scatterometry,etc., [7][8][9][10][11][12][13][14][15] with a wide range of applications [16][17][18][19][20]. In an earlier paper, it has been predicted theoretically how, and under which conditions, CFS can be more sensitive than the classical IOS [21].…”

Section: Introductionmentioning

confidence: 99%

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

et al. 2014

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Abstract:Optical scatterometry is the state of art optical inspection technique for quality control in lithographic process. As such, any boost in its performance carries very relevant potential in semiconductor industry. Recently we have shown that coherent Fourier scatterometry (CFS) can lead to a notably improved sensitivity in the reconstruction of the geometry of printed gratings. In this work, we report on implementation of a CFS instrument, which confirms the predicted performances. The system, although currently operating at a relatively low numerical aperture (NA = 0.4) and long wavelength (633 nm) allows already the reconstruction of the grating parameters with nanometer accuracy, which is comparable to that of AFM and SEM measurements on the same sample, used as reference measurements. Additionally, 1 nm accuracy in lateral positioning has been demonstrated, corresponding to 0.08% of the pitch of the grating used in the actual experiment.

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Section: Introductionmentioning

confidence: 99%

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

et al. 2014

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“…SEM is best suited to measure semiconductors with high resolution but needs a vacuum environment which makes it complex and ultra-expensive [1]. Currently, various indirect methods are being explored for such as scatterometry and ellipsometry for rapid, full-field non-destructive testing [2,3]. Polarization based methods are also being explored as it is well-known that sub-wavelength structures affect the state of polarization [4,5].…”

Section: Introductionsmentioning

confidence: 99%

Subwavelength metrological chracterization by Mueller matrix polarimeter and finite difference time domain method

Adhikari

Dev

Asundi

2016

Optics and Lasers in Engineering

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“…Based on the conventional spectroscopic or angle-resolved ellipsometry, optical scatterometry, also referred to as optical critical dimension (OCD) metrology, has been widely used for critical dimension (CD) monitoring [1][2][3]. The success of optical scatterometry heavily depends on two key techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Eqs (1). and(2) is marked as y l with three indices i, j and k lumped into a single index l. The calculated Mueller matrix element calc ,( , ) .…”

mentioning

confidence: 99%

Measurement configuration optimization for grating reconstruction by Mueller matrix polarimetry

et al. 2013

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As a non-imaging optical measurement technique, spectroscopic Mueller matrix polarimetry (MMP) has been introduced for critical dimension (CD) and overlay metrology with recent great success. Due to the additional information provided by the Mueller matrices when the most general conical diffraction configuration is considered, MMP has demonstrated a great potential in semiconductor manufacturing. In order to make full use of the additional information provided by the Mueller matrices, it is of great importance for MMP to optimize the measurement configuration. In this paper, we introduce the norm of a configuration error propagating matrix as the cost function to optimize the measurement configuration for spectroscopic MMP with the aim of finding an optimal combination of fixed incidence and azimuthal angles, which provides higher measurement accuracy. The optimal measurement configuration can be achieved by minimizing the norm of the configuration error propagating matrix in the available ranges of incidence and azimuthal angles. Experiments performed on a silicon grating with a dual-rotating compensator Mueller matrix polarimeter have demonstrated the validity of the proposed measurement configuration optimization method.

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Ellipsometric scatterometry for the metrology of sub-01-μm-linewidth structures

Cited by 61 publications

References 4 publications

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

Reconstruction of sub-wavelength features and nano-positioning of gratings using coherent Fourier scatterometry

Subwavelength metrological chracterization by Mueller matrix polarimeter and finite difference time domain method

Measurement configuration optimization for grating reconstruction by Mueller matrix polarimetry

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