Ellipsometric studies ofBexZn1−xSebetween 3 eV and 25 eV

Investigation of II –VI alloy lattice dynamics by IR spectroscopic ellipsometry

“…It is also expected that hexagonal structure of CdBeSe can avoid the formation of defects like twins. Large difference between the energy gaps of constituents (CdSe: E g = 1.74 eV, ZnSe: E g = 2.69 eV, BeSe: E g = 5.5 eV) enables to obtain substantial increase of E g by adding some amount of beryllium [5][6][7][8]. Moreover, replacing Zn (Cd) atom by light atom Be results in changes in the phonon spectra of mixed crystals [9,10].…”

Growth and optical characterization of Cd1‐xBexSe and Cd1‐xMgxSe crystals

“…It has been demonstrated [4] that beryllium chalcogenides can improve the optoelectronic devices based on II-VI materials due to a large contribution of covalent bonding and high cohesive energy of Be compounds. For example, partial substitution of Zn by Be in ZnSe improves material properties by inducing noticeable lattice strengthening and gives a unique opportunity to obtain semiconductors with band-gap in the range 2.7-5.5 eV [5][6][7]. Cd 1-x Mg x Se and Cd 1-x Be x Se alloys have attracted great attention because they are mostly promising for the fabrication of fullcolour visible optical devices due to a large difference in the energy gaps E g of constituents (CdSe: E g = 1.74 eV, MgSe: E g ≈ 4.0 eV, BeSe: E g ≈ 5.5 eV) and they seem to offer some alternative structures to those based on ZnSe.…”

Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

“…The bandgap of this material should be large to allow large band offsets in the BeSeTe/Si heterostructure and good electrical insulator properties. BeTe has a measured bandgap of 2.7 eV, which is indirect; and BeSe has a theoretical bandgap of 4.5 eV, and less certain evidence that it is indirect as well [9,10]. Linear interpolation yields a bandgap of 3.51 eV for BeSe 0.45 Te 0.55 , comparable to the ZnS bandgap 3.66 eV.…”