Embedded EEPROM design in PD-SOI for application in an extended temperature range (−40°C up to 200°C)

Optimization of SiGe bandgap-based circuits for up to 300°C operation

“…Above 150°C, leakage currents and reliability concerns in commercial bulk silicon platforms have prompted the move to silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) processes for applications up to 300°C [6][7][8][9][10]. The other traditional approach has been to use wide bandgap (WBG) semiconductors such as SiC or GaN, which have been shown to be capable of operating at temperatures as high as 600°C [11][12][13][14][15].…”